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IRF6708S2TR1PBF

IRF6708S2TR1PBF
Mfr. #:
IRF6708S2TR1PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF6708S2TR1PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6708S2TR1PBF DatasheetIRF6708S2TR1PBF Datasheet (P4-P6)IRF6708S2TR1PBF Datasheet (P7-P9)IRF6708S2TR1PBF Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DirectFET-S1
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
36 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
14.3 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
6.6 nC
Pd - शक्ति अपव्यय:
20 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
रील
उचाइ:
0.74 mm
लम्बाइ:
4.85 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
3.95 mm
ब्रान्ड:
Infineon / IR
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001523958
एकाइ वजन:
0.017637 oz
Tags
IRF670, IRF67, IRF6, IRF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 13A 6-Pin Direct-FET S1 T/R
***ied Electronics & Automation
MOSFET N-Ch 30V 13A HEXFET Direct-FET S1
***ment14 APAC
MOSFET, N CH, 30V, 13A, DIRECTFET LV
***i-Key
MOSFET N-CH 30V 13A DIRECTFET-LV
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 13A, DIRECTFET LV; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Pulse Current Idm:110A; Voltage Vgs th Min:1.35V
भाग # Mfg। विवरण स्टक मूल्य
IRF6708S2TR1PBF
DISTI # IRF6708S2TR1PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 13A DIRECTFET-LV
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6708S2TR1PBF
    DISTI # 942-IRF6708S2TR1PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET S1
    RoHS: Compliant    		0
      छवि भाग # विवरण
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF

      		 MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF

      		 MOSFET
      IRF6708S2TR1PBF

      Mfr.#: IRF6708S2TR1PBF

      OMO.#: OMO-IRF6708S2TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      IRF6708S2TRPBF

      Mfr.#: IRF6708S2TRPBF

      OMO.#: OMO-IRF6708S2TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 13A DIRECTFET-LV
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2500
      मात्रा प्रविष्ट गर्नुहोस्:
      IRF6708S2TR1PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
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