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BSC018NE2LSI

BSC018NE2LSI
Mfr. #:
BSC018NE2LSI
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC018NE2LSI डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
25 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
48 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
69 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
65 S
पतन समय:
3.6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
4.8 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
24 ns
सामान्य टर्न-अन ढिलाइ समय:
5.2 ns
भाग # उपनाम:
BSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030
एकाइ वजन:
0.004176 oz
Tags
BSC018NE2LSI, BSC018NE2LS, BSC018NE, BSC018, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***R
    M***R
    MA

    wihtout

    2019-04-21
    E**j
    E**j
    DE

    Excellent

    2019-04-08
    O***d
    O***d
    IL

    o.k

    2019-01-14
भाग # Mfg। विवरण स्टक मूल्य
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27In Stock
  • 1000:$0.6798
  • 500:$0.8611
  • 100:$1.1103
  • 10:$1.4050
  • 1:$1.5900
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 25V 29A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5852
BSC018NE2LSIATMA1
DISTI # BSC018NE2LSI		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    BSC018NE2LSIATMA1
    DISTI # BSC018NE2LSIATMA1    		Infineon Technologies AGTrans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.4609
    • 10000:$0.4439
    • 20000:$0.4279
    • 30000:$0.4129
    • 50000:$0.4059
    BSC018NE2LSIATMA1
    DISTI # 34AC1374    		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes4867
    • 1:$1.5900
    • 10:$1.4100
    • 25:$1.3100
    • 50:$1.2100
    • 100:$1.1100
    • 250:$0.9860
    • 500:$0.8610
    • 1000:$0.6790
    BSC018NE2LSIInfineon Technologies AGPower Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		4415
    • 1000:$0.5300
    • 500:$0.5500
    • 100:$0.5800
    • 25:$0.6000
    • 1:$0.6500
    BSC018NE2LSI
    DISTI # 726-BSC018NE2LSI    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		987
    • 1:$1.3200
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    BSC018NE2LSIXT
    DISTI # 726-BSC018NE2LSIATMA    		Infineon Technologies AGMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
    RoHS: Compliant    		0
    • 5000:$0.5320
    BSC018NE2LSIInfineon Technologies AG 8481
      BSC018NE2LSIATMA1
      DISTI # BSC018NE2LSIATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-85048
      • 1:$0.3800
      • 5:$0.3440
      • 25:$0.3332
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4877
      • 5:£1.1700
      • 25:£1.0600
      • 100:£0.8410
      • 250:£0.7470
      • 500:£0.6520
      BSC018NE2LSIATMA1
      DISTI # 2781051      		Infineon Technologies AGMOSFET, N-CH, 25V, 100A, TDSON
      RoHS: Compliant      		4867
      • 5:$1.7000
      • 25:$1.4800
      • 100:$1.2100
      • 250:$1.0200
      • 500:$0.8810
      • 1000:$0.8330
      • 5000:$0.7900
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      उपलब्धता
      स्टक:
      38
      अर्डर मा:
      2021
      मात्रा प्रविष्ट गर्नुहोस्:
      BSC018NE2LSI को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.३१
      US$ १.३१
      10
      US$ १.१२
      US$ ११.२०
      100
      US$ ०.८६
      US$ ८६.१०
      500
      US$ ०.७६
      US$ ३८०.५०
      1000
      US$ ०.६०
      US$ ६००.००
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