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IRFU3709ZPBF

IRFU3709ZPBF
Mfr. #:
IRFU3709ZPBF
निर्माता:
Infineon / IR
विवरण:
MOSFET MOSFT 30V 86A 6.5mOhm 17nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFU3709ZPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3709ZPBF DatasheetIRFU3709ZPBF Datasheet (P4-P6)IRFU3709ZPBF Datasheet (P7-P9)IRFU3709ZPBF Datasheet (P10-P12)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
86 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
8.2 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
17 nC
Pd - शक्ति अपव्यय:
79 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
उचाइ:
6.22 mm
लम्बाइ:
6.73 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
2.38 mm
ब्रान्ड:
Infineon / IR
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
75
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001552414
एकाइ वजन:
0.139332 oz
Tags
IRFU3709Z, IRFU3709, IRFU370, IRFU37, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***ied Electronics & Automation
IRFU3709ZPBF N-channel MOSFET Module, 86 A, 30 V, 3-Pin IPAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:86A; On Resistance, Rds(on):6.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, I-PAK; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:61A; Resistance, Rds On:0.0065ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:I-PAK; Termination Type:Through Hole; Current, Idm Pulse:340A; No. of Pins:3; Power Dissipation:79mW; SMD Marking:79; Time, t Off:15ns; Time, t On:12ns; Voltage, Vds Max:30V
भाग # Mfg। विवरण स्टक मूल्य
IRFU3709ZPBF
DISTI # IRFU3709ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 86A I-PAK
RoHS: Compliant
Min Qty: 825
Container: Tube		Limited Supply - Call
    IRFU3709ZPBF
    DISTI # 942-IRFU3709ZPBF    		Infineon Technologies AGMOSFET MOSFT 30V 86A 6.5mOhm 17nC
    RoHS: Compliant    		0
      IRFU3709ZPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 825
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        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        2500
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