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STGW35NB60SD

STGW35NB60SD
Mfr. #:
STGW35NB60SD
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors N Ch 35A 600V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGW35NB60SD डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGW35NB60SD DatasheetSTGW35NB60SD Datasheet (P4-P6)STGW35NB60SD Datasheet (P7-P9)STGW35NB60SD Datasheet (P10-P12)STGW35NB60SD Datasheet (P13)
ECAD Model:
थप जानकारी:
STGW35NB60SD थप जानकारी STGW35NB60SD Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
STGW35NB60SD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
70 A
उचाइ:
20.15 mm
लम्बाइ:
15.75 mm
चौडाइ:
5.15 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
600
उपश्रेणी:
IGBTs
व्यापार नाम:
PowerMESH
एकाइ वजन:
1.340411 oz
Tags
STGW35NB, STGW35N, STGW35, STGW3, STGW, STG
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
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IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
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IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
***ical
Trans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-247 Rail
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Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes
***rchild Semiconductor
The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
भाग # Mfg। विवरण स्टक मूल्य
STGW35NB60SD
DISTI # 497-16202-5-ND		STMicroelectronicsIGBT 600V 70A 200W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$3.4860
  • 510:$4.0593
  • 120:$4.6988
  • 30:$5.3603
  • 1:$6.2400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 138
  • 1:€4.6900
  • 10:€3.9900
  • 25:€3.9900
  • 50:€3.9900
  • 100:€3.2900
  • 500:€2.8900
  • 1000:€2.4900
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW35NB60SD)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$3.0900
  • 1200:$2.9900
  • 2400:$2.7900
  • 3600:$2.6900
  • 6000:$2.5900
STGW35NB60SD
DISTI # 511-STGW35NB60SD		STMicroelectronicsIGBT Transistors N Ch 35A 600V
RoHS: Compliant		0
  • 1:$5.5500
  • 10:$4.7200
  • 100:$4.0900
  • 250:$3.8800
  • 500:$3.4800
  • 1000:$2.9400
STGW35NB60SD
DISTI # STGW35NB60SD		STMicroelectronicsTransistor: IGBT,600V,35A,200W,TO247-348
  • 1:$4.9500
  • 3:$4.2600
  • 10:$3.4300
  • 30:$3.0800
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 2500:$4.4400
  • 1000:$4.6600
  • 500:$5.5300
  • 250:$6.1600
  • 100:$6.4900
  • 10:$7.4900
  • 1:$8.8000
STGW35NB60SD
DISTI # 1293658		STMicroelectronicsIGBT, TO-247
RoHS: Compliant		18
  • 100:£3.6800
  • 10:£4.2500
  • 1:£5.5400
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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
STGW35NB60SD को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.५५
US$ ५.५५
10
US$ ४.७२
US$ ४७.२०
100
US$ ४.०९
US$ ४०९.००
250
US$ ३.८८
US$ ९७०.००
500
US$ ३.४८
US$ १ ७४०.००
1000
US$ २.९४
US$ २ ९४०.००
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