IPB600N25N3 G

Mfr. #:: IPB600N25N3 G
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB600N25N3 G डाटा पाना
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ECAD Model:
थप जानकारी:: IPB600N25N3 G थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 250 V

आईडी - निरन्तर ड्रेन वर्तमान:: 25 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 51 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 29 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 136 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

प्रकार:: OptiMOS 3 Power-Transistor

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 24 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 10 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 22 ns

सामान्य टर्न-अन ढिलाइ समय:: 10 ns

भाग # उपनाम:: IPB600N25N3GATMA1 IPB6N25N3GXT SP000676408

एकाइ वजन:: 0.139332 oz

Tags: IPB600N25, IPB600, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB600N25N3 G थप जानकारी

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB600N25N3GATMA1 DISTI # V72:2272_06383169	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	61	25:$2.0310 10:$2.2560 1:$2.9139
IPB600N25N3GATMA1 DISTI # V36:1790_06383169	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.0580 500000:$1.0590 100000:$1.1490 10000:$1.2860 1000:$1.3080
IPB600N25N3GATMA1 DISTI # IPB600N25N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	763In Stock	500:$1.7183 100:$2.0914 10:$2.6020 1:$2.9000
IPB600N25N3GATMA1 DISTI # IPB600N25N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	763In Stock	500:$1.7183 100:$2.0914 10:$2.6020 1:$2.9000
IPB600N25N3GATMA1 DISTI # IPB600N25N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.2393 2000:$1.2870 1000:$1.3823
IPB600N25N3GATMA1 DISTI # 33111532	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.1144
IPB600N25N3G DISTI # 31073245	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263 RoHS: Compliant	279	10:$2.6875
IPB600N25N3GATMA1 DISTI # 26977400	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	61	5:$2.9139
IPB600N25N3GATMA1 DISTI # IPB600N25N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB600N25N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 4000	10000:$1.1536 6000:$1.1745 4000:$1.2154 2000:$1.2610 1000:$1.3082
IPB600N25N3 G DISTI # IPB600N25N3 G	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$1.1492 25000:$1.1640 10000:$1.1791 5000:$1.1946 3000:$1.2269 2000:$1.2610 1000:$1.2970
IPB600N25N3GATMA1 DISTI # SP000676408	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263 (Alt: SP000676408) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.9869 6000:€1.0579 4000:€1.1389 2000:€1.2339 1000:€1.4809
IPB600N25N3GATMA1. DISTI # 27AC6721	Infineon Technologies AG	DIFFERENTIATED MOSFETS ROHS COMPLIANT: YES	0	10000:$1.1600 6000:$1.1800 4000:$1.2200 2000:$1.2600 1:$1.3100
IPB600N25N3GATMA1 DISTI # 85X6023	Infineon Technologies AG	MOSFET Transistor, N Channel, 25 A, 250 V, 0.051 ohm, 10 V, 3 V RoHS Compliant: Yes	1109	500:$1.6000 250:$1.7100 100:$1.8300 50:$1.9800 25:$2.1400 10:$2.2900 1:$2.7000
IPB600N25N3 G DISTI # 726-IPB600N25N3GXT	Infineon Technologies AG	MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 RoHS: Compliant	1050	1:$2.6700 10:$2.2700 100:$1.8100 500:$1.5800 1000:$1.3100 2000:$1.2200 5000:$1.1800
IPB600N25N3GATMA1 DISTI # 726-IPB600N25N3GATMA	Infineon Technologies AG	MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 RoHS: Compliant	878	1:$2.6700 10:$2.2700 100:$1.8100 500:$1.5800 1000:$1.3100 2000:$1.2200 5000:$1.1800
IPB600N25N3GATMA1 DISTI # 8269204P	Infineon Technologies AG	MOSFET N-CH 25A 250V OPTIMOS3 TO263, RL	1480	500:£1.0870 250:£1.1930 50:£1.3580
IPB600N25N3GATMA1 DISTI # 2443388	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TO-263-3 RoHS: Compliant	1209	2000:$1.8400 1000:$1.9700 500:$2.3800 100:$2.7300 10:$3.4200 1:$4.0200
IPB600N25N3GATMA1 DISTI # 2443388RL	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TO-263-3 RoHS: Compliant	0	2000:$1.8400 1000:$1.9700 500:$2.3800 100:$2.7300 10:$3.4200 1:$4.0200
IPB600N25N3GATMA1 DISTI # 2443388	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TO-263-3	1662	500:£1.2200 250:£1.3100 100:£1.3900 10:£1.7500 1:£2.3300

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उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

IPB600N25N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.६७~~; ~~US$ २.६७~~

10: ~~US$ २.२७~~; ~~US$ २२.७०~~

100: ~~US$ १.८१~~; ~~US$ १८१.००~~

500: ~~US$ १.५८~~; ~~US$ ७९०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IPB600N25 4
IPB600 5
IPB60 105
IPB6 183
IPB 1339

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IPB600N25N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes