SI7772DP-T1-GE3

Mfr. #:: SI7772DP-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI7772DP-T1-GE3 डाटा पाना
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HTML Datasheet:: SI7772DP-T1-GE3 Datasheet SI7772DP-T1-GE3 Datasheet (P4-P6)SI7772DP-T1-GE3 Datasheet (P7-P9)SI7772DP-T1-GE3 Datasheet (P10-P12)SI7772DP-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:: SI7772DP-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-SO-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 35.6 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 13 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 28 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 29.8 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

उचाइ:: 1.04 mm

लम्बाइ:: 6.15 mm

शृङ्खला:: SI7

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 5.15 mm

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 37 S

पतन समय:: 10 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 18 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 15 ns

सामान्य टर्न-अन ढिलाइ समय:: 16 ns

भाग # उपनाम:: SI7772DP-GE3

एकाइ वजन:: 0.017870 oz

Tags: SI77, SI7

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7772DP-T1-GE3 विवरण

***ure Electronics: Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V

SI7772DP-T1-GE3 थप जानकारी

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI7772DP-T1-GE3 DISTI # V72:2272_09215678	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2938 1000:$0.3135 500:$0.3648 250:$0.4058 100:$0.4252 25:$0.5137 10:$0.5241 1:$0.6158
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.3270
SI7772DP-T1-GE3 DISTI # 26730596	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2975 1000:$0.3008 500:$0.3273 250:$0.3609 100:$0.3648 25:$0.3925
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 21000	3000:$0.3199 6000:$0.3189 12000:$0.3179 18000:$0.3169 30000:$0.3169
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7772DP-T1-GE3 DISTI # 35R6247	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes	0	1:$0.8200 25:$0.6540 50:$0.5760 100:$0.4970 250:$0.4540 500:$0.4100 1000:$0.3430
SI7772DP-T1-GE3. DISTI # 15AC0304	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes	21000	1:$0.3420 3000:$0.3420
SI7772DP-T1-GE3 DISTI # 781-SI7772DP-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	1843	1:$0.8200 10:$0.6540 100:$0.4970 500:$0.4100 1000:$0.3430 3000:$0.3420
SI7772DP-T1-GE3	Vishay Siliconix		2988
SI7772DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - Stock
SI7772DP-T1-GE3 DISTI # C1S803604553529	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5930	250:$0.3609 100:$0.3648 25:$0.3925 10:$0.4361

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: TPD1E1B04DPYR OMO.#: OMO-TPD1E1B04DPYR	TVS Diodes / ESD Suppressors 1-channel ESD protection diode with low dynamic resistance and low clamping voltage 2-X1SON -40 to 125
	Mfr.#: ESD307U102NE6327XTSA1 OMO.#: OMO-ESD307U102NE6327XTSA1	TVS Diodes / ESD Suppressors TVS DIODES
	Mfr.#: ICL3222EIVZ OMO.#: OMO-ICL3222EIVZ	RS-232 Interface IC RS232 3V 2D/2R 15KV SHTDWN IND
	Mfr.#: LM4132CMF-3.0/NOPB OMO.#: OMO-LM4132CMF-3-0-NOPB	Voltage References SOT23 Precision Low Dropout Voltage Refe
	Mfr.#: SI7617DN-T1-GE3 OMO.#: OMO-SI7617DN-T1-GE3	MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
	Mfr.#: 2N7002BKMB,315 OMO.#: OMO-2N7002BKMB-315	MOSFET N-Chan 60V 450mA
	Mfr.#: SI7617DN-T1-GE3 OMO.#: OMO-SI7617DN-T1-GE3-VISHAY	MOSFET P-CH 30V 35A 1212-8 PPAK
	Mfr.#: LM4132CMF-3.0/NOPB OMO.#: OMO-LM4132CMF-3-0-NOPB-TEXAS-INSTRUMENTS	Voltage References SOT23 Precision Low Dropout Voltage Refe
	Mfr.#: TPD1E1B04DPYR OMO.#: OMO-TPD1E1B04DPYR-TEXAS-INSTRUMENTS	TVS DIODE 3.6V 8.5V 2X1SON
	Mfr.#: AP1608SGC OMO.#: OMO-AP1608SGC-1052	Standard LEDs - SMD GREEN WATER CLEAR

उपलब्धता

स्टक:: Available
अर्डर मा:: 1987
मात्रा प्रविष्ट गर्नुहोस्:

SI7772DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.८१~~; ~~US$ ०.८१~~

10: ~~US$ ०.६५~~; ~~US$ ६.५३~~

100: ~~US$ ०.५०~~; ~~US$ ४९.६०~~

500: ~~US$ ०.४१~~; ~~US$ २०५.००~~

1000: ~~US$ ०.३३~~; ~~US$ ३२८.००~~

बाट सुरु गर्नुहोस्

SI77 66
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SI7772DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes