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IKY50N120CH3XKSA1

IKY50N120CH3XKSA1
Mfr. #:
IKY50N120CH3XKSA1
निर्माता:
Infineon Technologies
विवरण:
IGBT Transistors
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IKY50N120CH3XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO247-4-2
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
100 A
Pd - शक्ति अपव्यय:
652 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
100 A
ब्रान्ड:
Infineon टेक्नोलोजीहरू
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
240
उपश्रेणी:
IGBTs
भाग # उपनाम:
IKY50N120CH3 SP001465126
एकाइ वजन:
0.211644 oz
Tags
IKY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
IGBT, 1.2KV, 100A, 652W, TO-247
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts. | Summary of Features: Extremely low control inductance loop with extra emitter pin for driver feedback; 20% reduction in total switching losses compared to 3pin package using same technology; Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint | Benefits: Highest efficiency with lowest switching losses 1200 V IGBT; High power density 1200V discrete IGBT; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247 | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
भाग # Mfg। विवरण स्टक मूल्य
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1-ND		Infineon Technologies AGIGBT 1200V 100A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 720:$8.7800
  • 240:$9.8699
  • 25:$11.2020
  • 10:$11.6860
  • 1:$12.7200
IKY50N120CH3XKSA1
DISTI # IKY50N120CH3XKSA1		Infineon Technologies AGIGBT PRODUCTS - Rail/Tube (Alt: IKY50N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.2900
  • 1440:$7.3900
  • 960:$7.6900
  • 480:$7.9900
  • 240:$8.2900
IKY50N120CH3XKSA1
DISTI # SP001465126		Infineon Technologies AGIGBT PRODUCTS (Alt: SP001465126)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.9900
  • 500:€6.3900
  • 100:€6.6900
  • 50:€6.8900
  • 25:€7.1900
  • 10:€7.4900
  • 1:€8.1900
IKY50N120CH3XKSA1
DISTI # 93AC7076		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes219
  • 500:$8.4400
  • 250:$9.0200
  • 100:$9.4900
  • 50:$10.1400
  • 25:$10.7800
  • 10:$11.2400
  • 1:$12.2200
IKY50N120CH3XKSA1
DISTI # 726-IKY50N120CH3XKSA		Infineon Technologies AGIGBT Transistors
RoHS: Compliant		199
  • 1:$12.1000
  • 10:$11.1300
  • 25:$10.6700
  • 100:$9.4000
  • 250:$8.9300
  • 500:$8.3600
IKY50N120CH3XKSA1
DISTI # 1623281		Infineon Technologies AGIGBT 1200V 50A HIGHSPEED3 DIODE TO-247-4, TU219
  • 60:£5.3760
  • 30:£5.7060
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant		219
  • 250:$10.8800
  • 100:$12.4000
  • 50:$13.3100
  • 10:$14.1900
  • 5:$16.3100
  • 1:$17.6200
IKY50N120CH3XKSA1
DISTI # 2986353		Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247219
  • 100:£6.8100
  • 50:£7.2700
  • 10:£7.7300
  • 5:£8.7800
  • 1:£9.2900
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उपलब्धता
स्टक:
199
अर्डर मा:
2182
मात्रा प्रविष्ट गर्नुहोस्:
IKY50N120CH3XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १२.१०
US$ १२.१०
10
US$ ११.१३
US$ १११.३०
25
US$ १०.६७
US$ २६६.७५
100
US$ ९.४०
US$ ९४०.००
250
US$ ८.९३
US$ २ २३२.५०
500
US$ ८.३६
US$ ४ १८०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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