IPP110N20N3 G

IPP110N20N3 G
Mfr. #:
IPP110N20N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPP110N20N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPP110N20N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
88 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
87 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
ट्यूब
उचाइ:
15.65 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.4 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
71 S
पतन समय:
11 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
26 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
41 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
भाग # उपनाम:
IPP110N20N3GXKSA1 IPP11N2N3GXK SP000677892
एकाइ वजन:
0.211644 oz
Tags
IPP110N20N3G, IPP110N20N3, IPP110N2, IPP110, IPP11, IPP1, IPP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPP110N20N3GXKSA1
DISTI # V99:2348_06377977
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
400
  • 500:$4.8629
  • 250:$5.2310
  • 100:$5.3430
  • 50:$6.0519
  • 25:$6.2660
  • 10:$6.5990
  • 1:$8.0850
IPP110N20N3GXKSA1
DISTI # V36:1790_06377977
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$3.6150
  • 250000:$3.6190
  • 50000:$4.0900
  • 5000:$4.9830
  • 500:$5.1360
IPP110N20N3GXKSA1
DISTI # IPP110N20N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 200V 88A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1976In Stock
  • 2500:$3.5299
  • 500:$4.2087
  • 100:$4.8332
  • 25:$5.5664
  • 10:$5.8380
  • 1:$6.4600
IPP110N20N3GXKSA1
DISTI # 33719649
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
400
  • 2:$8.0850
IPP110N20N3 G
DISTI # IPP110N20N3 G
Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: IPP110N20N3 G)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
    IPP110N20N3 G
    DISTI # SP000677892
    Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin TO-220 Tube (Alt: SP000677892)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.7900
    • 500:€2.9900
    • 100:€3.0900
    • 50:€3.1900
    • 25:€3.2900
    • 10:€3.4900
    • 1:€3.7900
    IPP110N20N3GXK
    DISTI # IPP110N20N3GXKSA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP110N20N3GXKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 5000:$3.2859
    • 3000:$3.3454
    • 2000:$3.4619
    • 1000:$3.5917
    • 500:$3.7262
    IPP110N20N3GXKSA1
    DISTI # 47W3478
    Infineon Technologies AGMOSFET, N CHANNEL, 200V, 88A, TO220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:88A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes528
    • 500:$4.0400
    • 250:$4.4300
    • 100:$4.6500
    • 50:$5.0000
    • 25:$5.3500
    • 10:$5.6200
    • 1:$6.2100
    IPP110N20N3 G
    DISTI # 726-IPP110N20N3G
    Infineon Technologies AGMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
    RoHS: Compliant
    5557
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.3900
    • 500:$4.0000
    IPP110N20N3GXKSA1
    DISTI # 726-IPP110N20N3GXKSA
    Infineon Technologies AGMOSFET N-Ch 200V 88A TO220-3 OptiMOS 3
    RoHS: Compliant
    481
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.3900
    • 500:$4.0000
    IPP110N20N3GXKSA1
    DISTI # 7528381
    Infineon Technologies AGMOSFET N-CHANNEL 200V 88A OPTIMOS3 TO220, EA280
    • 25:£4.3900
    • 10:£4.7600
    • 1:£5.5700
    IPP110N20N3GXKSA1
    DISTI # 7528381P
    Infineon Technologies AGMOSFET N-CHANNEL 200V 88A OPTIMOS3 TO220, TU286
    • 25:£4.3900
    • 10:£4.7600
    IPP110N20N3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 88A I(D), 200V, 0.011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB460
    • 220:$8.3520
    • 105:$9.1350
    • 1:$11.7450
    IPP110N20N3GXKSA1
    DISTI # IPP110N20N3GXKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,88A,300W,PG-TO220-313
    • 50:$4.3200
    • 10:$4.9900
    • 3:$5.6400
    • 1:$6.2700
    IPP110N20N3 G
    DISTI # TMOSP10066
    Infineon Technologies AGMOSFET200V11mOhm88A TO220
    RoHS: Compliant
    Stock DE - 100Stock HK - 0Stock US - 0
    • 50:$4.7700
    • 100:$4.5000
    • 150:$4.2200
    • 200:$3.8100
    • 250:$3.6800
    IPP110N20N3 GInfineon Technologies AGRoHS(ship within 1day)75
    • 1:$7.5100
    • 10:$6.3800
    • 50:$5.6300
    • 100:$5.4100
    • 500:$5.3300
    • 1000:$5.2200
    IPP110N20N3GXKSA1
    DISTI # 2212835
    Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO220-3813
    • 500:£3.1600
    • 250:£3.4600
    • 100:£3.6400
    • 10:£4.1900
    • 1:£5.3500
    IPP110N20N3GXKSA1
    DISTI # 2212835
    Infineon Technologies AGMOSFET, N-CH, 200V, 88A, TO220-3
    RoHS: Compliant
    806
    • 500:$6.0300
    • 250:$6.6200
    • 100:$6.9300
    • 25:$7.9900
    • 10:$8.3800
    • 1:$9.2700
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    अर्डर मा:
    1986
    मात्रा प्रविष्ट गर्नुहोस्:
    IPP110N20N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ६.१५
    US$ ६.१५
    10
    US$ ५.५६
    US$ ५५.६०
    25
    US$ ५.३०
    US$ १३२.५०
    100
    US$ ४.६०
    US$ ४६०.००
    250
    US$ ४.३९
    US$ १ ०९७.५०
    500
    US$ ४.००
    US$ २ ०००.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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