OMO ElectronicOMO Electronic
Expand menu
0 कार्ट

SI2601DN-T1-GE3

SI2601DN-T1-GE3
Mfr. #:
SI2601DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 19mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI2601DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI2601DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
3.3 mm
शृङ्खला:
SI2
चौडाइ:
3.3 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI2601DN-GE3
Tags
SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
भाग # Mfg। विवरण स्टक मूल्य
SI2601DN-T1-GE3
DISTI # 781-SI2601DN-GE3		Vishay IntertechnologiesMOSFET 20V 19mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3920
  • 6000:$0.3730
  • 9000:$0.3590
छवि भाग # विवरण
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3

 MOSFET 20V 19mohm @ 4.5V
SI2601DN-T1-GE3

Mfr.#: SI2601DN-T1-GE3

OMO.#: OMO-SI2601DN-T1-GE3-317

 RF Bipolar Transistors MOSFET 20V 19mohm @ 4.5V
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
SI2601DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
More Newest Products
Top