SIRA88BDP-T1-GE3

Mfr. #:: SIRA88BDP-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET N-Channel 30 V (D-S) MOSFET
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIRA88BDP-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK SO-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 40 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 5.5 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: - 4.4 V

Vgs - गेट-स्रोत भोल्टेज:: - 16 V, + 20 V

Qg - गेट चार्ज:: 12.2 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

ब्रान्ड:: Vishay / Siliconix

पतन समय:: 5 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 5 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 15 ns

सामान्य टर्न-अन ढिलाइ समय:: 8 ns

Tags: SIRA8, SIRA, SIR

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

सम्बन्धित उत्पादनहरु

छवि

भाग #

विवरण

Mfr.#: SIRA88BDP-T1-GE3

OMO.#: OMO-SIRA88BDP-T1-GE3

MOSFET N-Channel 30 V (D-S) MOSFET

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
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मात्रा
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SIRA88BDP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes