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FQU12N20TU

FQU12N20TU
Mfr. #:
FQU12N20TU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 200V N-Channel QFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FQU12N20TU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
9 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
280 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
6.3 mm
लम्बाइ:
6.8 mm
शृङ्खला:
FQU12N20
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
चौडाइ:
2.5 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
7.3 S
पतन समय:
55 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
120 ns
कारखाना प्याक मात्रा:
5040
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
FQU12N20TU_NL
एकाइ वजन:
0.012102 oz
Tags
FQU12N2, FQU12, FQU1, FQU
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -3.7 A, 1.4 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
भाग # Mfg। विवरण स्टक मूल्य
FQU12N20TU
DISTI # FQU12N20TU-ND		ON SemiconductorMOSFET N-CH 200V 9A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5709
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8019
  • 10:€0.7129
  • 25:€0.6409
  • 50:€0.5829
  • 100:€0.5339
  • 500:€0.4929
  • 1000:€0.4579
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.4429
  • 10080:$0.4399
  • 20160:$0.4349
  • 30240:$0.4289
  • 50400:$0.4179
FQU12N20TU
DISTI # 82C4388		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-251AA ROHS COMPLIANT: YES0
  • 10000:$0.5080
  • 2500:$0.5230
  • 1000:$0.6480
  • 500:$0.7420
  • 100:$0.8390
  • 10:$1.1000
  • 1:$1.2800
FQU12N20TU
DISTI # 512-FQU12N20TU		ON SemiconductorMOSFET 200V N-Channel QFET
RoHS: Compliant		3569
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9130
  • 500:$0.8070
  • 1000:$0.6370
  • 2500:$0.5650
  • 10000:$0.5440
FQU12N20TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		15120
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
FQU12N20TU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.१०
US$ १.१०
10
US$ ०.९४
US$ ९.४४
100
US$ ०.७२
US$ ७२.५०
500
US$ ०.६४
US$ ३२०.५०
1000
US$ ०.५१
US$ ५०६.००
2500
US$ ०.४५
US$ १ १२०.००
10000
US$ ०.४३
US$ ४ ३२०.००
25000
US$ ०.४२
US$ १० ४५०.००
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