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SIS435DNT-T1-GE3

SIS435DNT-T1-GE3
Mfr. #:
SIS435DNT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIS435DNT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIS435DNT-T1-GE3 DatasheetSIS435DNT-T1-GE3 Datasheet (P4-P6)SIS435DNT-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIS435DNT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
30 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
900 mV
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
180 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
39 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, PowerPAK
प्याकेजिङ:
रील
शृङ्खला:
SIS
ट्रान्जिस्टर प्रकार:
1 P-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
55 S
पतन समय:
30 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
30 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
100 ns
सामान्य टर्न-अन ढिलाइ समय:
40 ns
Tags
SIS43, SIS4, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS435DNT-T1-GE3 P-channel MOSFET Transistor; 22 A; 20 V; 8-Pin PowerPAK 1212
***ure Electronics
Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.0044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
भाग # Mfg। विवरण स्टक मूल्य
SIS435DNT-T1-GE3
DISTI # V72:2272_09216159		Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 25:$0.5925
  • 10:$0.5969
  • 1:$0.6835
SIS435DNT-T1-GE3
DISTI # V36:1790_09216159		Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.2727
  • 1500000:$0.2728
  • 300000:$0.2793
  • 30000:$0.2885
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Cut Tape (CT)		2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 1
Container: Digi-Reel®		2963In Stock
  • 1000:$0.3296
  • 500:$0.4120
  • 100:$0.5212
  • 10:$0.6800
  • 1:$0.7700
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 30A 1212-8
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.2660
  • 6000:$0.2700
  • 3000:$0.2900
SIS435DNT-T1-GE3
DISTI # 31610622		Vishay IntertechnologiesTrans MOSFET P-CH 20V 22A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		1961
  • 1000:$0.3030
  • 500:$0.3752
  • 250:$0.4633
  • 100:$0.4653
  • 26:$0.5925
SIS435DNT-T1-GE3
DISTI # SIS435DNT-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2564
  • 18000:$0.2635
  • 12000:$0.2710
  • 6000:$0.2825
  • 3000:$0.2911
SIS435DNT-T1-GE3.
DISTI # 61AC1928		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-22A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:39W RoHS Compliant: Yes
RoHS: Compliant		0
  • 50000:$0.2580
  • 30000:$0.2700
  • 20000:$0.2900
  • 10000:$0.3100
  • 5000:$0.3360
  • 1:$0.3440
SIS435DNT-T1-GE3
DISTI # 70616573		Vishay SiliconixSIS435DNT-T1-GE3 P-channel MOSFET Transistor,22 A,20 V,8-Pin PowerPAK 1212
RoHS: Compliant		0
  • 300:$0.4000
  • 600:$0.3600
  • 1500:$0.3200
  • 3000:$0.3100
SIS435DNT-T1-GE3
DISTI # 78-SIS435DNT-T1-GE3		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
RoHS: Compliant		3598
  • 1:$0.7700
  • 10:$0.6570
  • 100:$0.5050
  • 500:$0.4090
  • 1000:$0.3250
  • 3000:$0.2900
  • 6000:$0.2700
  • 9000:$0.2660
SIS435DNT-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs PowerPAK 1212-8TAmericas - 9000
  • 3000:$0.2880
  • 6000:$0.2700
  • 9000:$0.2640
  • 12000:$0.2560
छवि भाग # विवरण
USBLC6-2SC6

Mfr.#: USBLC6-2SC6

OMO.#: OMO-USBLC6-2SC6

 TVS Diodes / ESD Suppressors ESD Protection Low Cap
SIS443DN-T1-GE3

Mfr.#: SIS443DN-T1-GE3

OMO.#: OMO-SIS443DN-T1-GE3

 MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
IRFZ48RSPBF

Mfr.#: IRFZ48RSPBF

OMO.#: OMO-IRFZ48RSPBF

 MOSFET N-Chan 60V 50 Amp
DMT6007LFG-7

Mfr.#: DMT6007LFG-7

OMO.#: OMO-DMT6007LFG-7

 MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
ERJ-2RKF1003X

Mfr.#: ERJ-2RKF1003X

OMO.#: OMO-ERJ-2RKF1003X

 Thick Film Resistors - SMD 0402 100Kohms 1% AEC-Q200
ERJ-2RKF10R0X

Mfr.#: ERJ-2RKF10R0X

OMO.#: OMO-ERJ-2RKF10R0X

 Thick Film Resistors - SMD 0402 10.0ohms 1% Tol AEC-Q200
DMT6007LFG-7

Mfr.#: DMT6007LFG-7

OMO.#: OMO-DMT6007LFG-7-DIODES

 Trans MOSFET N-CH 60V 15A Automotive 8-Pin PowerDI EP T/R
1812L110/33MR

Mfr.#: 1812L110/33MR

OMO.#: OMO-1812L110-33MR-LITTELFUSE

 Resettable Fuses - PPTC PTC 33V 1.10A POLY SURF MOUNT
IRFZ48RSPBF

Mfr.#: IRFZ48RSPBF

OMO.#: OMO-IRFZ48RSPBF-VISHAY

 MOSFET N-CH 60V 50A D2PAK
SIS443DN-T1-GE3

Mfr.#: SIS443DN-T1-GE3

OMO.#: OMO-SIS443DN-T1-GE3-VISHAY

 MOSFET P-CH 40V 35A PPAK 1212-8
उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
SIS435DNT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.७९
US$ ०.७९
10
US$ ०.६४
US$ ६.३८
100
US$ ०.४८
US$ ४८.५०
500
US$ ०.४०
US$ २००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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