HGT1S12N60C3DS

HGT1S12N60C3DS
Mfr. #:
HGT1S12N60C3DS
निर्माता:
Rochester Electronics, LLC
विवरण:
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
HGT1S12N60C3DS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
HGT1S12N60C3D, HGT1S12N60C, HGT1S12, HGT1S1, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
HGT1S12N60C3DS
DISTI # HGT1S12N60C3DS
ON Semiconductor24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes - Bulk (Alt: HGT1S12N60C3DS)
RoHS: Not Compliant
Min Qty: 173
Container: Bulk
Americas - 0
  • 1730:$1.6900
  • 173:$1.7900
  • 346:$1.7900
  • 519:$1.7900
  • 865:$1.7900
HGT1S12N60C3DSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
565
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
छवि भाग # विवरण
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A

IGBT Transistors 600V N-Channel IGBT SMPS Series
HGT1S12N60A4D

Mfr.#: HGT1S12N60A4D

OMO.#: OMO-HGT1S12N60A4D-1190

नयाँ र मौलिक
HGT1S12N60A4DS

Mfr.#: HGT1S12N60A4DS

OMO.#: OMO-HGT1S12N60A4DS-ON-SEMICONDUCTOR

IGBT 600V 54A 167W D2PAK
HGT1S12N60A4S9A

Mfr.#: HGT1S12N60A4S9A

OMO.#: OMO-HGT1S12N60A4S9A-ON-SEMICONDUCTOR

IGBT 600V 54A 167W TO263AB
HGT1S12N60B3D

Mfr.#: HGT1S12N60B3D

OMO.#: OMO-HGT1S12N60B3D-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S12N60B3DS

Mfr.#: HGT1S12N60B3DS

OMO.#: OMO-HGT1S12N60B3DS-1190

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60C3DST

Mfr.#: HGT1S12N60C3DST

OMO.#: OMO-HGT1S12N60C3DST-1190

नयाँ र मौलिक
HGT1S12N60C3S

Mfr.#: HGT1S12N60C3S

OMO.#: OMO-HGT1S12N60C3S-1190

नयाँ र मौलिक
HGT1S12N60C3S9A

Mfr.#: HGT1S12N60C3S9A

OMO.#: OMO-HGT1S12N60C3S9A-1190

नयाँ र मौलिक
HGT1S12N60C3S9AR4501

Mfr.#: HGT1S12N60C3S9AR4501

OMO.#: OMO-HGT1S12N60C3S9AR4501-1190

नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
HGT1S12N60C3DS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.५४
US$ २.५४
10
US$ २.४१
US$ २४.०८
100
US$ २.२८
US$ २२८.१५
500
US$ २.१५
US$ १ ०७७.४०
1000
US$ २.०३
US$ २ ०२८.००
बाट सुरु गर्नुहोस्
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