FDP6670AL

FDP6670AL
Mfr. #:
FDP6670AL
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET N-Ch PowerTrench Logic Level
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FDP6670AL डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP6670AL DatasheetFDP6670AL Datasheet (P4-P5)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
80 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.5 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 65 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
68 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
16.3 mm
लम्बाइ:
10.67 mm
शृङ्खला:
FDP6670AL
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
MOSFET
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
115 S
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
400
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
42 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
FDP6670AL_NL
एकाइ वजन:
0.063493 oz
Tags
FDP6670, FDP667, FDP66, FDP6, FDP
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
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***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3
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30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
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***emi
Power MOSFET 90 Amps, 24 Volts
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*** Electronics
N-CHANNEL POWER MOSFET
भाग # Mfg। विवरण स्टक मूल्य
FDP6670AL
DISTI # FDP6670AL-ND
ON SemiconductorMOSFET N-CH 30V 80A TO-220
RoHS: Compliant
Min Qty: 800
Container: Tube
Limited Supply - Call
    FDP6670AL
    DISTI # 38C7148
    ON SemiconductorN CHANNEL MOSFET, 30V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,MSL:- RoHS Compliant: Yes0
      FDP6670AL
      DISTI # 512-FDP6670AL
      ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
      RoHS: Compliant
      0
        FDP6670AL_Q
        DISTI # 512-FDP6670AL_Q
        ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
        RoHS: Not compliant
        0
          FDP6670ALFairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          26896
          • 1000:$0.5500
          • 500:$0.5800
          • 100:$0.6100
          • 25:$0.6300
          • 1:$0.6800
          FDP6670ALFairchild Semiconductor Corporation 1202
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB385
            • 77:$0.4620
            • 16:$0.6600
            • 1:$1.3200
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB14
            • 4:$1.3200
            • 1:$1.6500
            FDP6670ALUnknown80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB2444
            • 1113:$1.6350
            • 497:$1.7985
            • 1:$3.2700
            FDP6670ALFairchild Semiconductor Corporation 18
              FDP6670ALFairchild Semiconductor Corporation 855
                FDP6670ALFairchild Semiconductor Corporation 50
                  FDP6670AL
                  DISTI # 1467978
                  ON SemiconductorMOSFET, N, 3-TO-220
                  RoHS: Compliant
                  0
                  • 1000:$1.9100
                  • 500:$2.1800
                  • 250:$2.4800
                  • 100:$2.7000
                  • 25:$2.9700
                  • 1:$3.1600
                  छवि भाग # विवरण
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                  OMO.#: OMO-FDP6670ALNL-1190

                  नयाँ र मौलिक
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                  उपलब्धता
                  स्टक:
                  Available
                  अर्डर मा:
                  4500
                  मात्रा प्रविष्ट गर्नुहोस्:
                  FDP6670AL को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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