NE3515S02-T1D-A

NE3515S02-T1D-A
Mfr. #:
NE3515S02-T1D-A
निर्माता:
CEL
विवरण:
RF JFET Transistors Super Low Noise Pseudomorphic
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NE3515S02-T1D-A डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
CEL
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
S0-2
प्रविधि
GaAs
ट्रान्जिस्टर-प्रकार
pHEMT
पाउनु
12.5 dB
Pd-शक्ति-डिसिपेशन
165 mW
अधिकतम-सञ्चालन-तापमान
+ 125 C
सञ्चालन - आवृत्ति
12 GHz
आईडी-निरन्तर-नाली-वर्तमान
88 mA
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
4 V
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
70 mS
Vgs-गेट-स्रोत-ब्रेकडाउन-भोल्टेज
- 3 V
NF-शोर-चित्र
0.3 dB
P1dB-संकुचन-बिन्दु
14 dBm
Tags
NE3515, NE351, NE35, NE3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
भाग # Mfg। विवरण स्टक मूल्य
NE3515S02-T1D-A
DISTI # NE3515S02-T1D-A-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1D-A
    DISTI # 551-NE3515S02-T1D-A
    California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
    RoHS: Compliant
    0
      छवि भाग # विवरण
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-T1D-A

      Mfr.#: NE3515S02-T1D-A

      OMO.#: OMO-NE3515S02-T1D-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02-A

      Mfr.#: NE3515S02-A

      OMO.#: OMO-NE3515S02-A-CEL

      RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
      NE3515S02-T1C-A

      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

      RF JFET Transistors Super Low Noise Pseudomorphic
      NE3515S02

      Mfr.#: NE3515S02

      OMO.#: OMO-NE3515S02-1190

      नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      NE3515S02-T1D-A को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
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