NE3515S02-T1C-A

NE3515S02-T1C-A
Mfr. #:
NE3515S02-T1C-A
निर्माता:
CEL
विवरण:
RF JFET Transistors Super Low Noise Pseudomorphic
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
NE3515S02-T1C-A डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
रेनेसास
उत्पादन कोटि
RF FETs
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
S0-2
प्रविधि
GaAs
ट्रान्जिस्टर-प्रकार
pHEMT
पाउनु
12.5 dB
Pd-शक्ति-डिसिपेशन
165 mW
अधिकतम-सञ्चालन-तापमान
+ 125 C
सञ्चालन - आवृत्ति
12 GHz
आईडी-निरन्तर-नाली-वर्तमान
88 mA
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
4 V
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
70 mS
Vgs-गेट-स्रोत-ब्रेकडाउन-भोल्टेज
- 3 V
NF-शोर-चित्र
0.3 dB
P1dB-संकुचन-बिन्दु
14 dBm
Tags
NE3515, NE351, NE35, NE3
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 88mA 4-Pin Case S-02 T/R
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
भाग # Mfg। विवरण स्टक मूल्य
NE3515S02-T1C-A
DISTI # NE3515S02-T1C-ATR-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3515S02-T1C-A
    DISTI # NE3515S02-T1C-ACT-ND
    California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NE3515S02-T1C-A
      DISTI # NE3515S02-T1C-ADKR-ND
      California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NE3515S02-T1C-A
        DISTI # 551-NE3515S02-T1C-A
        California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
        RoHS: Compliant
        0
          NE3515S02-T1C-ARenesas Electronics Corporation 
          RoHS: Not Compliant
          7790
          • 1000:$0.6600
          • 500:$0.6900
          • 100:$0.7200
          • 25:$0.7500
          • 1:$0.8100
          छवि भाग # विवरण
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A-CEL

          RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A-CEL

          RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02

          Mfr.#: NE3515S02

          OMO.#: OMO-NE3515S02-1190

          नयाँ र मौलिक
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          5000
          मात्रा प्रविष्ट गर्नुहोस्:
          NE3515S02-T1C-A को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ ०.००
          US$ ०.००
          10
          US$ ०.००
          US$ ०.००
          100
          US$ ०.००
          US$ ०.००
          500
          US$ ०.००
          US$ ०.००
          1000
          US$ ०.००
          US$ ०.००
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