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SQM40010EL_GE3

SQM40010EL_GE3
Mfr. #:
SQM40010EL_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQM40010EL_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQM40010EL_GE3 DatasheetSQM40010EL_GE3 Datasheet (P4-P6)SQM40010EL_GE3 Datasheet (P7-P9)SQM40010EL_GE3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SQM40010EL_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.21 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
230 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
375 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
174 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
60 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
एकाइ वजन:
0.077603 oz
Tags
SQM4001, SQM400, SQM40, SQM4, SQM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK
***et
Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 40V 120A D2PAK
***ark
Mosfet, Aec-Q101, N-Ch, 40V, 120A, To263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00121Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, 120A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, AEC-Q101, CA-N, 40V, 120A, TO263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00121ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
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