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STB33N60DM2

STB33N60DM2
Mfr. #:
STB33N60DM2
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STB33N60DM2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STB33N60DM2 थप जानकारी STB33N60DM2 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
24 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
130 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
43 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
190 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
एमडीमेश
प्याकेजिङ:
रील
शृङ्खला:
STB33N60DM2
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
62 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
एकाइ वजन:
0.079014 oz
Tags
STB33N60D, STB33N60, STB33, STB3, STB
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
भाग # Mfg। विवरण स्टक मूल्य
STB33N60DM2
DISTI # V36:1790_16116189		STMicroelectronicsTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$1.7270
  • 500000:$1.7290
  • 100000:$1.8230
  • 10000:$1.9670
  • 1000:$1.9900
STB33N60DM2
DISTI # V72:2272_17691770		STMicroelectronicsTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R0
    STB33N60DM2
    DISTI # 497-16354-1-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		576In Stock
    • 500:$2.5583
    • 100:$3.0052
    • 10:$3.6680
    • 1:$4.0800
    STB33N60DM2
    DISTI # 497-16354-6-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		576In Stock
    • 500:$2.5583
    • 100:$3.0052
    • 10:$3.6680
    • 1:$4.0800
    STB33N60DM2
    DISTI # 497-16354-2-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$1.9152
    • 2000:$1.9900
    • 1000:$2.0947
    STB33N60DM2
    DISTI # STB33N60DM2    		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB33N60DM2)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$1.7900
    • 10000:$1.7900
    • 4000:$1.8900
    • 2000:$1.9900
    • 1000:$2.0900
    STB33N60DM2
    DISTI # STB33N60DM2    		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin D2PAK T/R (Alt: STB33N60DM2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€1.6900
    • 6000:€1.7900
    • 4000:€1.8900
    • 2000:€1.9900
    • 1000:€2.0900
    STB33N60DM2
    DISTI # 84Y8557    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$1.7900
    STB33N60DM2
    DISTI # 511-STB33N60DM2    		STMicroelectronicsMOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
    RoHS: Compliant    		0
    • 1000:$1.9900
    • 2000:$1.8900
    STB33N60DM2
    DISTI # 2531104    		STMicroelectronicsMOSFET, N-CH, 600V, 24A, TO-2638
    • 100:£2.8000
    • 10:£3.4100
    • 1:£4.2500
    STB33N60DM2
    DISTI # 2531104    		STMicroelectronicsMOSFET, N-CH, 600V, 24A, TO-263
    RoHS: Compliant    		8
    • 500:$3.8600
    • 100:$4.5300
    • 10:$5.5300
    • 1:$6.1500
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1000
    मात्रा प्रविष्ट गर्नुहोस्:
    STB33N60DM2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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