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FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1
Mfr. #:
FF6MR12W2M1B11BOMA1
निर्माता:
Infineon Technologies
विवरण:
Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FF6MR12W2M1B11BOMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FF6MR12W2M1B11BOMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
अलग सेमीकन्डक्टर मोड्युलहरू
RoHS:
Y
उत्पादन:
पावर MOSFET मोड्युलहरू
प्रकार:
EasyDUAL मोड्युल
Vf - फर्वार्ड भोल्टेज:
4.6 V
Vgs - गेट-स्रोत भोल्टेज:
- 10 V, 20 V
माउन्टिङ शैली:
स्क्रू माउन्ट
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
दोहोरो
ब्रान्ड:
Infineon टेक्नोलोजीहरू
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
पतन समय:
30 ns
आईडी - निरन्तर ड्रेन वर्तमान:
200 A
उत्पादन प्रकार:
अलग सेमीकन्डक्टर मोड्युलहरू
Rds अन - ड्रेन-स्रोत प्रतिरोध:
5.63 mOhms
उठ्ने समय:
18.7 ns
कारखाना प्याक मात्रा:
15
उपश्रेणी:
अलग सेमीकन्डक्टर मोड्युलहरू
व्यापार नाम:
EasyDUAL; CoolSiC
सामान्य टर्न-अफ ढिलाइ समय:
62.6 ns
सामान्य टर्न-अन ढिलाइ समय:
20.4 ns
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.45 V
भाग # उपनाम:
FF6MR12W2M1_B11 SP001716496
Tags
FF6
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
भाग # Mfg। विवरण स्टक मूल्य
FF6MR12W2M1B11BOMA1
DISTI # V99:2348_22937625		Infineon Technologies AGFF6MR12W2M1B11BOMA10
  • 15000:$279.4500
  • 7500:$279.4600
  • 1500:$285.2800
  • 150:$301.4400
  • 15:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1-ND		Infineon Technologies AGMOSFET MODULE 1200V 200A
RoHS: Compliant
Min Qty: 1
Container: Tray		15In Stock
  • 15:$291.6927
  • 1:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # SP001716496		Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray (Alt: SP001716496)
RoHS: Compliant
Min Qty: 1
Container: Tray		Europe - 135
  • 1000:€256.6900
  • 500:€260.3900
  • 100:€263.3900
  • 50:€267.9900
  • 25:€282.1900
  • 10:€285.1900
  • 1:€293.9900
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1		Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray - Trays (Alt: FF6MR12W2M1B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$258.3900
  • 90:$264.6900
  • 60:$271.3900
  • 30:$278.4900
  • 15:$282.1900
FF6MR12W2M1B11BOMA1
DISTI # 726-FF6MR12W2M1B11BO		Infineon Technologies AGDiscrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
RoHS: Compliant		31
  • 1:$310.9800
  • 5:$303.5000
  • 10:$295.9600
  • 25:$291.8100
FF6MR12W2M1B11BOMA1
DISTI # XSKDRABV0046268		Infineon Technologies AG 
RoHS: Compliant		175 in Stock0 on Order
  • 175:$383.5800
  • 15:$410.9800
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उपलब्धता
स्टक:
Available
अर्डर मा:
1993
मात्रा प्रविष्ट गर्नुहोस्:
FF6MR12W2M1B11BOMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३१०.९८
US$ ३१०.९८
5
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US$ १ ५१७.५०
10
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US$ २ ९५९.६०
25
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US$ ७ २९५.२५
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