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STU13N60M2

STU13N60M2
Mfr. #:
STU13N60M2
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STU13N60M2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STU13N60M2 थप जानकारी STU13N60M2 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
11 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
380 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
17 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
110 W
कन्फिगरेसन:
एकल
व्यापार नाम:
एमडीमेश
प्याकेजिङ:
ट्यूब
शृङ्खला:
STU13N60M2
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
9.5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
41 ns
सामान्य टर्न-अन ढिलाइ समय:
11 ns
एकाइ वजन:
0.139332 oz
Tags
STU13N, STU13, STU1, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK
***p One Stop
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmesh II plus 600V 11A
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics SCT
Power MOSFETs, 600V, 11A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube
***enic
600V 12A 280m´Î@10V6A 110W 3V@250uA 1.2pF@100V N Channel 700pF@100v 19nC@10V +150¡Í@(Tj) TO-251(I-PAK) MOSFETs ROHS
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 600V, 8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
***el Electronic
VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***S
French Electronic Distributor since 1988
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 500V,RDS(ON) 1.7 Ohms,ID 5A,I-Pak,PD 110W,VGS+/-30V,-55C
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 500V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:1.7kohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:27ns; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
भाग # Mfg। विवरण स्टक मूल्य
STU13N60M2
DISTI # 497-13885-5-ND		STMicroelectronicsMOSFET N-CH 600V 11A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$1.0442
  • 2550:$1.0844
  • 525:$1.4057
  • 150:$1.7109
  • 75:$2.0081
  • 10:$2.1290
  • 1:$2.3700
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 3174
  • 750:€0.6499
  • 450:€0.6999
  • 300:€0.7589
  • 150:€0.8279
  • 75:€1.0119
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTrans MOSFET N-CH 600V 11A 3-Pin IPAK Tube - Rail/Tube (Alt: STU13N60M2)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.9769
  • 18000:$0.9969
  • 12000:$1.0429
  • 6000:$1.0919
  • 3000:$1.1459
STU13N60M2
DISTI # 06X3750		STMicroelectronicsPTD HIGH VOLTAGE0
  • 5000:$0.9950
  • 2500:$1.0300
  • 1000:$1.2700
  • 500:$1.4200
  • 100:$1.5300
  • 10:$1.9100
  • 1:$2.2500
STU13N60M2
DISTI # 511-STU13N60M2		STMicroelectronicsMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
RoHS: Compliant		0
  • 3000:$1.0400
STU13N60M2
DISTI # STU13N60M2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,7A,110W,IPAK55
  • 50:$1.4400
  • 10:$1.6000
  • 3:$2.0000
  • 1:$2.3200
STU13N60M2
DISTI # TMOSP11424		STMicroelectronicsN-CH 600V 11A 380mOhmTO251-3
RoHS: Compliant		Stock DE - 2850Stock HK - 0Stock US - 0
  • 75:$0.9933
  • 150:$0.9365
  • 300:$0.8798
  • 450:$0.7946
  • 750:$0.7662
STU13N60M2STMicroelectronics600V,0.35,11A,N-Channel Power MOSFET116
  • 1:$1.0900
  • 100:$0.9700
  • 500:$0.9200
  • 1000:$0.8300
STU13N60M2
DISTI # XSKDRABS0031159		STMicroelectronicsParallel I/O Port, 4 I/O, CMOS, PDSO8
RoHS: Compliant		2550 in Stock0 on Order
  • 2550:$0.9240
  • 750:$0.9900
छवि भाग # विवरण
SIR696DP-T1-GE3

Mfr.#: SIR696DP-T1-GE3

OMO.#: OMO-SIR696DP-T1-GE3

 MOSFET 125V Vds 20V Vgs PowerPAK SO-8
STTH108A

Mfr.#: STTH108A

OMO.#: OMO-STTH108A

 Rectifiers 1.0 Amp 800 Volt
NCP43080DDR2G

Mfr.#: NCP43080DDR2G

OMO.#: OMO-NCP43080DDR2G

 Switching Controllers SECONDARY SIDE SYNCHRONOU
GRM188R6YA475KE15D

Mfr.#: GRM188R6YA475KE15D

OMO.#: OMO-GRM188R6YA475KE15D

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R 10%
SIR696DP-T1-GE3

Mfr.#: SIR696DP-T1-GE3

OMO.#: OMO-SIR696DP-T1-GE3-VISHAY

 MOSFET N-CH 125V 60A POWERPAKSO
GRT188R61H105KE13D

Mfr.#: GRT188R61H105KE13D

OMO.#: OMO-GRT188R61H105KE13D-MURATA-ELECTRONICS

 Cap Ceramic 1uF 50V X5R 10% Pad SMD 0603 85C Automotive T/R
NCP43080DDR2G

Mfr.#: NCP43080DDR2G

OMO.#: OMO-NCP43080DDR2G-ON-SEMICONDUCTOR

 Switching Controllers SECONDARY SIDE SYNCHRONOU
GRM188R6YA475KE15D

Mfr.#: GRM188R6YA475KE15D

OMO.#: OMO-GRM188R6YA475KE15D-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R 10%
STTH108A

Mfr.#: STTH108A

OMO.#: OMO-STTH108A-STMICROELECTRONICS

 DIODE GEN PURP 800V 1A SMA
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
STU13N60M2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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