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SIHG17N60D-GE3

SIHG17N60D-GE3
Mfr. #:
SIHG17N60D-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-247AC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG17N60D-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG17N60D-GE3 DatasheetSIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHG17N60D-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AC-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
17 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
340 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
45 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
277.8 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
थोक
शृङ्खला:
D
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIHG17N60D-E3
एकाइ वजन:
1.340411 oz
Tags
SIHG17, SIHG1, SIHG, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
भाग # Mfg। विवरण स्टक मूल्य
SIHG17N60D-GE3
DISTI # 27549478		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		85
  • 31:$2.5385
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 17A TO247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.4665
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.5900
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 1000:$1.8900
  • 2000:$1.8900
  • 500:$1.9900
SIHG17N60D-GE3
DISTI # 62W0514		Vishay IntertechnologiesPower MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes85
  • 1:$1.6500
  • 10:$1.6500
  • 25:$1.6500
  • 50:$1.6500
  • 100:$1.6500
  • 500:$1.6500
  • 1000:$1.6500
  • 2500:$1.6500
SIHG17N60D-GE3
DISTI # 78-SIHG17N60D-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		277
  • 1:$3.9700
  • 10:$3.2900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.3500
  • 1000:$1.9900
  • 2500:$1.8900
SIHG17N60DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG17N60D-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
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      उपलब्धता
      स्टक:
      277
      अर्डर मा:
      2260
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHG17N60D-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ३.९७
      US$ ३.९७
      10
      US$ ३.२९
      US$ ३२.९०
      100
      US$ २.७१
      US$ २७१.००
      250
      US$ २.६२
      US$ ६५५.००
      500
      US$ २.३५
      US$ १ १७५.००
      1000
      US$ १.९९
      US$ १ ९९०.००
      2500
      US$ १.८९
      US$ ४ ७२५.००
      5000
      US$ १.८२
      US$ ९ १००.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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