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IPB017N06N3 G

IPB017N06N3 G
Mfr. #:
IPB017N06N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB017N06N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB017N06N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-7
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
180 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.3 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
275 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
OptiMOS 3 Power-Transistor
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
99 S
पतन समय:
24 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
80 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
79 ns
सामान्य टर्न-अन ढिलाइ समय:
41 ns
भाग # उपनाम:
IPB017N06N3GATMA1 IPB17N6N3GXT SP000434404
एकाइ वजन:
0.056438 oz
Tags
IPB017N06N3, IPB017N06, IPB017N0, IPB017, IPB01, IPB0, IPB
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB017N06N3GATMA1
DISTI # V72:2272_06376932		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		952
  • 500:$2.8570
  • 250:$3.3860
  • 100:$3.4210
  • 25:$4.2100
  • 10:$4.2520
  • 1:$5.2503
IPB017N06N3GATMA1
DISTI # V36:1790_06376932		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000:$2.3900
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1702In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1702In Stock
  • 500:$3.0148
  • 100:$3.5415
  • 10:$4.3220
  • 1:$4.8100
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.3451
  • 1000:$2.4686
IPB017N06N3GATMA1
DISTI # 33150103		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		3000
  • 1000:$2.0612
IPB017N06N3 G
DISTI # 31398029		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263 T/R
RoHS: Compliant		1000
  • 5:$5.1375
IPB017N06N3GATMA1
DISTI # 32445162		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		952
  • 3:$5.2503
IPB017N06N3GATMA1
DISTI # IPB017N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 6000:$2.0900
  • 10000:$2.0900
  • 4000:$2.1900
  • 2000:$2.2900
  • 1000:$2.3900
IPB017N06N3 G
DISTI # IPB017N06N3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: IPB017N06N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 0
  • 50000:$2.1257
  • 25000:$2.1530
  • 10000:$2.1809
  • 5000:$2.2096
  • 3000:$2.2693
  • 2000:$2.3324
  • 1000:$2.3990
IPB017N06N3 G
DISTI # SP000434404		Infineon Technologies AGTrans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000434404)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.7900
  • 6000:€1.8900
  • 2000:€2.0900
  • 4000:€2.0900
  • 1000:€2.1900
IPB017N06N3GATMA1
DISTI # 60R2643		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    IPB017N06N3 G
    DISTI # 726-IPB017N06N3G    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		1133
    • 1:$4.4400
    • 10:$3.7700
    • 100:$3.2700
    • 250:$3.1000
    • 500:$2.7800
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GATMA1
    DISTI # 726-IPB017N06N3GATMA    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$4.4400
    • 10:$3.7700
    • 100:$3.2700
    • 250:$3.1000
    • 500:$2.7800
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GXT
    DISTI # 726-IPB017N06N3GXT    		Infineon Technologies AGMOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
    RoHS: Compliant    		0
    • 1000:$2.3500
    • 2000:$2.2300
    IPB017N06N3GInfineon Technologies AG 20
    • 2:$3.5840
    • 8:$2.3296
    IPB017N06N3GInfineon Technologies AG180 A, 60 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-26315
    • 8:$2.6100
    • 3:$3.4800
    • 1:$5.2200
    IPB017N06N3GInfineon Technologies AG180 A, 60 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-26316
    • 9:$2.4000
    • 3:$3.2000
    • 1:$4.8000
    IPB017N06N3GATMA1
    DISTI # 7545412    		Infineon Technologies AGMOSFET N-CH 60V 180A OPTIMOS3 TO263-7, EA19
    • 500:£2.2500
    • 250:£2.5100
    • 50:£2.7800
    • 10:£3.0500
    • 1:£3.1400
    IPB017N06N3GATMA1
    DISTI # 7545412P    		Infineon Technologies AGMOSFET N-CH 60V 180A OPTIMOS3 TO263-7, RL970
    • 500:£2.2500
    • 250:£2.5100
    • 50:£2.7800
    • 10:£3.0500
    IPB017N06N3GATMA1
    DISTI # 1775519    		Infineon Technologies AGMOSFET, N CH, 180A, 60V, PG-TO263-7
    RoHS: Compliant    		0
    • 2000:$3.3600
    • 1000:$3.5400
    • 500:$4.1900
    • 250:$4.6700
    • 100:$4.9300
    • 10:$5.6800
    • 1:$6.6900
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB017N06N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.४४
    US$ ४.४४
    10
    US$ ३.७७
    US$ ३७.७०
    100
    US$ ३.२७
    US$ ३२७.००
    250
    US$ ३.१०
    US$ ७७५.००
    500
    US$ २.७८
    US$ १ ३९०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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