MR4A16BCMA35R

MR4A16BCMA35R
Mfr. #:
MR4A16BCMA35R
निर्माता:
Everspin Technologies
विवरण:
NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MR4A16BCMA35R डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MR4A16BCMA35R थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
एभरस्पिन टेक्नोलोजीहरू
उत्पादन कोटि:
NVRAM
RoHS:
Y
प्याकेज / केस:
BGA-48
इन्टरफेस प्रकार:
समानान्तर
मेमोरी साइज:
16 Mbit
संगठन:
1 M x 16
डाटा बस चौडाइ:
16 bit
पहुँच समय:
35 ns
आपूर्ति भोल्टेज - अधिकतम:
3.6 V
आपूर्ति भोल्टेज - न्यूनतम:
3 V
सञ्चालन आपूर्ति वर्तमान:
110 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 85 C
शृङ्खला:
MR4A16B
प्याकेजिङ:
रील
ब्रान्ड:
एभरस्पिन टेक्नोलोजीहरू
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
उत्पादन प्रकार:
NVRAM
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
MR4A16BC, MR4A16B, MR4A1, MR4A, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RAM 16M PARALLEL 48FBGA
MR4A08B / MR4A16B 16Mb Parallel MRAMs
Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
भाग # Mfg। विवरण स्टक मूल्य
MR4A16BCMA35R
DISTI # MR4A16BCMA35R-ND
Everspin TechnologiesIC RAM 16M PARALLEL 48FBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$37.3354
MR4A16BCMA35R
DISTI # MR4A16BCMA35R
Everspin TechnologiesNVRAM MRAM Parallel 16Mb 3.3V 48-Pin FBGA T/R (Alt: MR4A16BCMA35R)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€34.5900
  • 5000:€33.1900
  • 10000:€31.8900
  • 15000:€29.5900
  • 25000:€27.6900
MR4A16BCMA35
DISTI # 936-MR4A16BCMA35
Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
RoHS: Compliant
0
    MR4A16BCMA35R
    DISTI # 936-MR4A16BCMA35R
    Everspin TechnologiesNVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
    RoHS: Compliant
    0
      छवि भाग # विवरण
      MR4A16BCYS35

      Mfr.#: MR4A16BCYS35

      OMO.#: OMO-MR4A16BCYS35

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BCYS35R

      Mfr.#: MR4A16BCYS35R

      OMO.#: OMO-MR4A16BCYS35R

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BYS35R

      Mfr.#: MR4A16BYS35R

      OMO.#: OMO-MR4A16BYS35R

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BCMA35R

      Mfr.#: MR4A16BCMA35R

      OMO.#: OMO-MR4A16BCMA35R

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BYS35

      Mfr.#: MR4A16BYS35

      OMO.#: OMO-MR4A16BYS35-EVERSPIN-TECHNOLOGIES

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BMA35R

      Mfr.#: MR4A16BMA35R

      OMO.#: OMO-MR4A16BMA35R-EVERSPIN-TECHNOLOGIES

      IC RAM 16M PARALLEL 48FBGA
      MR4A16BCYS35R

      Mfr.#: MR4A16BCYS35R

      OMO.#: OMO-MR4A16BCYS35R-EVERSPIN-TECHNOLOGIES

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BYS35R

      Mfr.#: MR4A16BYS35R

      OMO.#: OMO-MR4A16BYS35R-EVERSPIN-TECHNOLOGIES

      NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
      MR4A16BCMA35

      Mfr.#: MR4A16BCMA35

      OMO.#: OMO-MR4A16BCMA35-EVERSPIN-TECHNOLOGIES

      IC RAM 16M PARALLEL 48FBGA
      MR4A16BUYS45

      Mfr.#: MR4A16BUYS45

      OMO.#: OMO-MR4A16BUYS45-1190

      16Mb 1Mx16 Voltage 3.3V MRAM
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3000
      मात्रा प्रविष्ट गर्नुहोस्:
      MR4A16BCMA35R को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
      नवीनतम उत्पादनहरू
      • Nanonics Per MIL-DTL-32139 Dualobe
        TE Connectivity Aerospace, Defense, and Marine's Nanonics products are designed and qualified to MIL-DTL-32139 specifications.
      • THERMOFIT® DR-25 Tubing
        TE Connectivity's THERMOFIT DR-25 tubing offers a flexible, flame retardant, fluid- and abrasion-resistant solution.
      • INSTALITE ZH-150 Tubing
        TE Connectivity's INSTALITE ZH-150 heat-shrinkable tubing combines high-temperature and zero halogen properties in a lightweight material.
      • Raychem S200 Shield Terminators
        TE Connectivity Aerospace, Defense and Marine's S200 shield terminators provide an environmentally protected shield for high temperature cable applications.
      • Compare MR4A16BCMA35R
        MR4A16BCMA35 vs MR4A16BCMA35R vs MR4A16BCYS35
      • Multi-Position Backplane RF Modules
        The multi-position backplane RF module from TE has high level of performance to meet the demands of many different applications.
      Top