DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1
Mfr. #:
DF23MR12W1M1B11BOMA1
निर्माता:
Infineon Technologies
विवरण:
Discrete Semiconductor Modules
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
DF23MR12W1M1B11BOMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
अलग सेमीकन्डक्टर मोड्युलहरू
RoHS:
Y
उत्पादन:
पावर MOSFET मोड्युलहरू
प्रकार:
SiC पावर MOSFET
Vf - फर्वार्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
- 10 V, 20 V
माउन्टिङ शैली:
Fit थिच्नुहोस्
प्याकेज / केस:
Easy1B-2
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
दोहोरो
ब्रान्ड:
Infineon टेक्नोलोजीहरू
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
पतन समय:
13 ns
आईडी - निरन्तर ड्रेन वर्तमान:
25 A
सञ्चालन आपूर्ति भोल्टेज:
-
Pd - शक्ति अपव्यय:
20 mW
उत्पादन प्रकार:
अलग सेमीकन्डक्टर मोड्युलहरू
Rds अन - ड्रेन-स्रोत प्रतिरोध:
45 mOhms
उठ्ने समय:
7.2 ns
कारखाना प्याक मात्रा:
24
उपश्रेणी:
अलग सेमीकन्डक्टर मोड्युलहरू
व्यापार नाम:
CoolSIC
सामान्य टर्न-अफ ढिलाइ समय:
38.5 ns
सामान्य टर्न-अन ढिलाइ समय:
11.5 ns
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1200 V
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
भाग # उपनाम:
DF23MR12W1M1_B11 SP001602244
Tags
DF23, DF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 6.0pF 50volts C0G +/-0.5pF
***ure Electronics
N-Channel 1200 V 45 mOhm CoolSiC EasyPACK PressFIT/NTC Trench Mosfet Module
***ark
Mosfet Module, N-Ch, 1.2Kv, 30A; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.045Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ineon
Easy 1B 1200 V / 23 m booster module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
भाग # Mfg। विवरण स्टक मूल्य
DF23MR12W1M1B11BOMA1
DISTI # V99:2348_18205128
Infineon Technologies AGTrans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray10
  • 100:$81.4500
  • 25:$85.9400
  • 10:$89.0699
  • 5:$94.1700
  • 1:$96.8900
DF23MR12W1M1B11BOMA1
DISTI # DF23MR12W1M1B11BOMA1-ND
Infineon Technologies AGMOSFET MODULE 1200V 25A
RoHS: Compliant
Min Qty: 24
Container: Tray
Limited Supply - Call
    DF23MR12W1M1B11BOMA1
    DISTI # 32135610
    Infineon Technologies AGTrans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray10
    • 1:$96.8900
    DF23MR12W1M1B11BOMA1
    DISTI # 33AC0629
    Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes0
    • 10:$91.0300
    • 5:$95.3200
    • 1:$97.1000
    DF23MR12W1M1B11BOMA1
    DISTI # 726-DF23MR12W1M1B11
    Infineon Technologies AGDiscrete Semiconductor Modules
    RoHS: Compliant
    24
    • 1:$97.1000
    • 5:$95.3200
    • 10:$91.0300
    • 25:$88.0000
    • 50:$87.9900
    DF23MR12W1M1B11BOMA1
    DISTI # 2778389
    Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A
    RoHS: Compliant
    2
    • 1:£47.3900
    DF23MR12W1M1B11BOMA1
    DISTI # 2778389
    Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 30A
    RoHS: Compliant
    2
    • 50:$134.2700
    • 10:$138.9000
    • 5:$143.8600
    • 1:$149.1900
    छवि भाग # विवरण
    DF23MR12W1M1B11BPSA1

    Mfr.#: DF23MR12W1M1B11BPSA1

    OMO.#: OMO-DF23MR12W1M1B11BPSA1

    Discrete Semiconductor Modules
    DF23MR12W1M1B11BOMA1

    Mfr.#: DF23MR12W1M1B11BOMA1

    OMO.#: OMO-DF23MR12W1M1B11BOMA1

    Discrete Semiconductor Modules
    DF23MR12W1M1B11BPSA1

    Mfr.#: DF23MR12W1M1B11BPSA1

    OMO.#: OMO-DF23MR12W1M1B11BPSA1-INFINEON-TECHNOLOGIES

    MOSFET MOD 1200V 25A
    DF23MR12W1M1B11BOMA1

    Mfr.#: DF23MR12W1M1B11BOMA1

    OMO.#: OMO-DF23MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

    Trans MOSFET N-CH SiC 1.2KV 30A 22-Pin Tray
    उपलब्धता
    स्टक:
    24
    अर्डर मा:
    2007
    मात्रा प्रविष्ट गर्नुहोस्:
    DF23MR12W1M1B11BOMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    बाट सुरु गर्नुहोस्
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