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SI4435FDY-T1-GE3

SI4435FDY-T1-GE3
Mfr. #:
SI4435FDY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET -30V Vds 20V Vgs SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4435FDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4435FDY-T1-GE3 DatasheetSI4435FDY-T1-GE3 Datasheet (P4-P6)SI4435FDY-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
12.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
30 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
13.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
4.8 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 P-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
25 S
पतन समय:
16 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
30 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
21 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
एकाइ वजन:
0.002610 oz
Tags
SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, P-Ch, 30V, 12.6A, 150Deg C, 4.8W Rohs Compliant: Yes
***ical
Trans MOSFET P-CH 30V 12.6A 8-Pin SOIC N T/R
***nsix Microsemi
Small Signal Field-Effect Transistor
***ure Electronics
MOSFET -30V Vds 20V Vgs SO-8 c
भाग # Mfg। विवरण स्टक मूल्य
SI4435FDY-T1-GE3
DISTI # V99:2348_17597337		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET12128
  • 10000:$0.1083
  • 5000:$0.1163
  • 2500:$0.1211
  • 1000:$0.1359
  • 500:$0.1814
  • 100:$0.2270
  • 10:$0.3699
  • 1:$0.5225
SI4435FDY-T1-GE3
DISTI # V36:1790_17597337		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET0
  • 5000000:$0.1091
  • 2500000:$0.1093
  • 500000:$0.1197
  • 50000:$0.1360
  • 5000:$0.1386
SI4435FDY-T1-GE3
DISTI # SI4435FDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 12.6A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3460In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI4435FDY-T1-GE3
DISTI # SI4435FDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 12.6A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3460In Stock
  • 1000:$0.1557
  • 500:$0.2076
  • 100:$0.2769
  • 10:$0.4070
  • 1:$0.5000
SI4435FDY-T1-GE3
DISTI # SI4435FDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 12.6A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 62500:$0.1075
  • 25000:$0.1117
  • 12500:$0.1218
  • 5000:$0.1302
  • 2500:$0.1386
SI4435FDY-T1-GE3
DISTI # 31691637		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET12128
  • 10000:$0.1083
  • 5000:$0.1163
  • 2500:$0.1211
  • 1000:$0.1359
  • 500:$0.1814
  • 100:$0.2270
  • 57:$0.3699
SI4435FDY-T1-GE3
DISTI # SI4435FDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 12.6A 8-Pin SOIC (Alt: SI4435FDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500		Europe - 2500
  • 25000:€0.1899
  • 15000:€0.2049
  • 10000:€0.2219
  • 5000:€0.2579
  • 2500:€0.3779
SI4435FDY-T1-GE3
DISTI # SI4435FDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 12.6A 8-Pin SOIC - Tape and Reel (Alt: SI4435FDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.1019
  • 25000:$0.1049
  • 15000:$0.1079
  • 10000:$0.1119
  • 5000:$0.1159
SI4435FDY-T1-GE3
DISTI # 20AC3927		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.1040
  • 30000:$0.1140
  • 20000:$0.1240
  • 10000:$0.1390
  • 5000:$0.1590
  • 1:$0.1680
SI4435FDY-T1-GE3
DISTI # 78-SI4435FDY-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
RoHS: Compliant		27895
  • 1:$0.5200
  • 10:$0.3540
  • 100:$0.2390
  • 500:$0.1910
  • 1000:$0.1430
  • 2500:$0.1310
  • 5000:$0.1230
  • 10000:$0.1150
  • 25000:$0.1060
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BSS138

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RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

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885012106022

Mfr.#: 885012106022

OMO.#: OMO-885012106022

 Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSGP 1uF 0603 20% 25V MLCC
C1608X5R1A106K080AC

Mfr.#: C1608X5R1A106K080AC

OMO.#: OMO-C1608X5R1A106K080AC-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 10uF 10% 10Volts
BSS138

Mfr.#: BSS138

OMO.#: OMO-BSS138-ON-SEMICONDUCTOR

 MOSFET N-CH 50V 220MA SOT-23
TPS60403DBVR

Mfr.#: TPS60403DBVR

OMO.#: OMO-TPS60403DBVR-TEXAS-INSTRUMENTS

 Voltage Regulators - Switching Regulators 60mA Charge Pump Voltage Inverte
TS3USB30EDGSR

Mfr.#: TS3USB30EDGSR

OMO.#: OMO-TS3USB30EDGSR-TEXAS-INSTRUMENTS

 USB Switch ICs High-Speed USB 2.0 1:2 Mux/Demux Switch
उपलब्धता
स्टक:
26
अर्डर मा:
2009
मात्रा प्रविष्ट गर्नुहोस्:
SI4435FDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५२
US$ ०.५२
10
US$ ०.३५
US$ ३.५४
100
US$ ०.२४
US$ २३.९०
500
US$ ०.१९
US$ ९५.५०
1000
US$ ०.१४
US$ १४३.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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