IPB65R150CFDATMA1

Mfr. #:: IPB65R150CFDATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 700V 72A D2PAK-2
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB65R150CFDATMA1 डाटा पाना
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थप जानकारी:: IPB65R150CFDATMA1 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 650 V

आईडी - निरन्तर ड्रेन वर्तमान:: 22.4 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 135 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 3.5 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 86 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 195.3 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: CoolMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: CoolMOS CFDA

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

पतन समय:: 5.6 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 7.6 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 52.8 ns

सामान्य टर्न-अन ढिलाइ समय:: 12.4 ns

भाग # उपनाम:: IPB65R150CFD IPB65R15CFDXT SP000907034

एकाइ वजन:: 0.068654 oz

Tags: IPB65R150CFDAT, IPB65R150CFDA, IPB65R15, IPB65R1, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R150CFDATMA1 विवरण

***ure Electronics: Single N-Channel 650 V 150 mOhm 86 nC CoolMOS Power Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 650V 22.4A 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(2+Tab) TO-263 T/R

***et Europe: Trans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263

***et: Trans MOSFET N-CH 650V 22.4A 3-Pin TO-263 T/R

***ronik: N-CH 700V 22,4A 150mOhm TO263-3

***i-Key: HIGH POWER_LEGACY

***ark: Mosfet, N-Ch, 650V, 22.4A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 650V, 22.4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:-; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 650V, 22.4A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22.4A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.135ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:-; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:CoolMOS CFD2 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

IPB65R150CFDATMA1 थप जानकारी

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB65R150CFDATMA1 DISTI # IPB65R150CFDATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 22.4A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$2.0393
IPB65R150CFDATMA1 DISTI # IPB65R150CFDATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 22.4A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$2.4905 100:$3.0757 10:$3.7510 1:$4.2000
IPB65R150CFDATMA1 DISTI # IPB65R150CFDATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 22.4A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$2.4905 100:$3.0757 10:$3.7510 1:$4.2000
IPB65R150CFDATMA1 DISTI # IPB65R150CFDATMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB65R150CFDATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.8900 2000:$1.7900 4000:$1.6900 6000:$1.6900 10000:$1.5900
IPB65R150CFDATMA1 DISTI # SP000907034	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin(2+Tab) TO-263 (Alt: SP000907034) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.7900 2000:€1.6900 4000:€1.5900 6000:€1.4900 10000:€1.3900
IPB65R150CFDATMA1 DISTI # 13AC9033	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	0	1:$3.5100 10:$2.9800 25:$2.8500 50:$2.7200 100:$2.5900 250:$2.4500 500:$2.2000
IPB65R150CFD DISTI # 726-IPB65R150CFD	Infineon Technologies AG	MOSFET N-Ch 700V 72A D2PAK-2 RoHS: Compliant	272	1:$3.5100 10:$2.9800 100:$2.5900 250:$2.4500 500:$2.2000 1000:$1.8600
IPB65R150CFDATMA1 DISTI # 726-IPB65R150CFDATMA	Infineon Technologies AG	MOSFET N-Ch 700V 72A D2PAK-2 RoHS: Compliant	0	1:$3.5100 10:$2.9800 100:$2.5900 250:$2.4500 500:$2.2000 1000:$1.8600
IPB65R150CFDATMA1 DISTI # 2726047	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-263-3 RoHS: Compliant	0	1:£3.0400 10:£2.2900 100:£1.9900 250:£1.8900 500:£1.7000
IPB65R150CFDATMA1 DISTI # 2726047	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-263-3 RoHS: Compliant	0	1:$6.7000 10:$5.9800 100:$4.9100

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IPB65R150CFDATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes