T2G6003028-FL

T2G6003028-FL
Mfr. #:
T2G6003028-FL
निर्माता:
Qorvo
विवरण:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
T2G6003028-FL डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
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ECAD Model:
थप जानकारी:
T2G6003028-FL थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
TriQuint (Qorvo)
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
T2G
प्याकेजिङ
ट्रे
अंश-उपनामहरू
1100007
प्रविधि
GaN SiC
ट्रान्जिस्टर-प्रकार
HEMT
Tags
T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
भाग # Mfg। विवरण स्टक मूल्य
T2G6003028-FL
DISTI # 772-T2G6003028-FL
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
RoHS: Compliant
108
  • 1:$157.9200
  • 25:$142.5200
छवि भाग # विवरण
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6003028-FS

Mfr.#: T2G6003028-FS

OMO.#: OMO-T2G6003028-FS

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG-318

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

नयाँ र मौलिक
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

नयाँ र मौलिक
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

नयाँ र मौलिक
T2G6003028-FS EVAL BOARD

Mfr.#: T2G6003028-FS EVAL BOARD

OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
T2G6003028-FL को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २१३.७८
US$ २१३.७८
10
US$ २०३.०९
US$ २ ०३०.९१
100
US$ १९२.४०
US$ १९ २४०.२०
500
US$ १८१.७१
US$ ९० ८५६.५०
1000
US$ १७१.०२
US$ १७१ ०२४.००
बाट सुरु गर्नुहोस्
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