T2G6003028-FS

Mfr. #:: T2G6003028-FS
निर्माता:: Qorvo
विवरण:: RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: T2G6003028-FS डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: T2G6003028-FS थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: कोर्भो

उत्पादन कोटि:: आरएफ JFET ट्रान्जिस्टर

RoHS:: Y

ट्रान्जिस्टर प्रकार:: HEMT

प्रविधि:: GaN SiC

प्याकेजिङ:: ट्रे

शृङ्खला:: T2G

ब्रान्ड:: कोर्भो

नमी संवेदनशील:: हो

उत्पादन प्रकार:: आरएफ JFET ट्रान्जिस्टर

कारखाना प्याक मात्रा:: 50

उपश्रेणी:: ट्रान्जिस्टरहरू

भाग # उपनाम:: 1100021

Tags: T2G6003028-FS, T2G6003028-F, T2G6003, T2G6, T2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T2G6003028-FS विवरण

***W: RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN

T2G6003028-FS थप जानकारी

T2G GaN HEMT Transistors: QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
T2G6003028-FS DISTI # 772-T2G6003028-FS	Qorvo	RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless RoHS: Compliant	146	1:$141.0000 25:$121.9500
T2G6003028-FS EVAL BOARD DISTI # 772-T2G6003028-FSEB	Qorvo	RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd RoHS: Compliant	0	1:$875.0000

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उपलब्धता

स्टक:: 67
अर्डर मा:: 2050
मात्रा प्रविष्ट गर्नुहोस्:

T2G6003028-FS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १४१.००~~; ~~US$ १४१.००~~

25: ~~US$ १२१.९५~~; ~~US$ ३ ०४८.७५~~

100: ~~US$ १०५.४८~~; ~~US$ १० ५४८.००~~

बाट सुरु गर्नुहोस्

T2G6003028-FS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes