OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

SIHS36N50D-E3

SIHS36N50D-E3
Mfr. #:
SIHS36N50D-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 500V Vds 30V Vgs Super-247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHS36N50D-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHS36N50D-E3 DatasheetSIHS36N50D-E3 Datasheet (P4-P6)SIHS36N50D-E3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHS36N50D-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
500 V
आईडी - निरन्तर ड्रेन वर्तमान:
36 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
130 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
83 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
446 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
20.82 mm
लम्बाइ:
15.87 mm
शृङ्खला:
D
चौडाइ:
5.31 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
68 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
89 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
79 ns
सामान्य टर्न-अन ढिलाइ समय:
33 ns
भाग # उपनाम:
SIHS36N50D
एकाइ वजन:
1.340411 oz
Tags
SIHS3, SIHS, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 500V, 36A, SUPER-247; Transistor Polarity:N Channel; Continuous Dr
***Components
N-Channel MOSFET, 36 A, 500 V, 3-Pin Super-247 Vishay SiHS36N50D-E3
***et Europe
Trans MOSFET N-CH 500V 36A 3-Pin(3+Tab) Super-247
***et
Trans MOSFET N-CH 500V 36A 3-Pin Super-247
***ical
Trans MOSFET N-CH 500V 36A
***i-Key
MOSFET N-CH 500V 36A SUPER-247
***ment14 APAC
MOSFET, N-CH, 500V, 36A, SUPER-247; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.105ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:446W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-274AA; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
भाग # Mfg। विवरण स्टक मूल्य
SIHS36N50D-E3
DISTI # SIHS36N50D-E3-ND		Vishay SiliconixMOSFET N-CH 500V 36A SUPER-247
RoHS: Compliant
Min Qty: 1
Container: Tube		485In Stock
  • 1000:$4.1516
  • 500:$4.7667
  • 100:$5.6892
  • 10:$6.9190
  • 1:$7.6900
SIHS36N50D-E3
DISTI # SIHS36N50D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 36A 3-Pin(3+Tab) Super-247 - Tape and Reel (Alt: SIHS36N50D-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$3.9900
  • 1000:$3.8900
  • 2000:$3.6900
  • 3000:$3.5900
  • 5000:$3.4900
SIHS36N50D-E3
DISTI # 63W4117		Vishay IntertechnologiesMOSFET Transistor, N Channel, 36 A, 500 V, 0.105 ohm, 10 V, 3 V RoHS Compliant: Yes414
  • 1:$6.9900
  • 10:$6.3000
  • 25:$5.7400
  • 50:$5.4600
  • 100:$5.1800
  • 250:$4.7600
  • 500:$4.3400
SIHS36N50D-E3
DISTI # 78-SIHS36N50D-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs Super-247
RoHS: Compliant		484
  • 1:$6.9900
  • 10:$6.3000
  • 25:$5.7400
  • 100:$5.1800
  • 250:$4.7600
  • 500:$4.3400
  • 1000:$3.7800
SIHS36N50D-E3
DISTI # 7879200		Vishay IntertechnologiesMOSFET N-CH 500V 36A LOW CAP. SUPER247, EA41
  • 1:£5.5500
  • 10:£4.5500
  • 50:£4.1700
  • 100:£3.8900
  • 200:£3.6100
SIHS36N50D-E3
DISTI # 7879200P		Vishay IntertechnologiesMOSFET N-CH 500V 36A LOW CAP. SUPER247, RL64
  • 10:£4.5500
  • 50:£4.1700
  • 100:£3.8900
  • 200:£3.6100
SIHS36N50DE3Vishay IntertechnologiesPower Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
RoHS: Compliant		Europe - 400
    SIHS36N50D-E3
    DISTI # 2283628    		Vishay IntertechnologiesMOSFET, N-CH, 500V, 36A, SUPER-247
    RoHS: Compliant    		414
    • 1:$11.0600
    • 10:$9.9700
    • 25:$9.0900
    • 100:$8.2100
    • 250:$7.5300
    • 500:$6.8700
    • 1000:$5.9900
    • 2500:$5.7700
    SIHS36N50D-E3
    DISTI # 2283628    		Vishay IntertechnologiesMOSFET, N-CH, 500V, 36A, SUPER-247
    RoHS: Compliant    		449
    • 1:£5.5300
    • 5:£5.4000
    • 10:£4.4300
    • 50:£4.2200
    • 100:£4.0000
    छवि भाग # विवरण
    ESDCAN05-2BWY

    Mfr.#: ESDCAN05-2BWY

    OMO.#: OMO-ESDCAN05-2BWY

    		 TVS Diodes / ESD Suppressors Automotive dual-line Transil, Transient voltage suppressor (TVS) for CAN bus
    MCP2517FD-H/SL

    Mfr.#: MCP2517FD-H/SL

    OMO.#: OMO-MCP2517FD-H-SL

    		 CAN Interface IC Stand-alone CAN FD Controller w/SPI Interface
    FCH023N65S3-F155

    Mfr.#: FCH023N65S3-F155

    OMO.#: OMO-FCH023N65S3-F155

    		 MOSFET SuperFET3 650V 23 mOhm
    PIC32-HMZ144

    Mfr.#: PIC32-HMZ144

    OMO.#: OMO-PIC32-HMZ144

    		 Development Boards & Kits - PIC / DSPIC PIC32MZ2048ECG Development Board
    STD3N95K5AG

    Mfr.#: STD3N95K5AG

    OMO.#: OMO-STD3N95K5AG

    		 MOSFET Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package
    0678L9300-02

    Mfr.#: 0678L9300-02

    OMO.#: OMO-0678L9300-02

    		 Surface Mount Fuses 30A 250VAC 72 VCD
    ESDCAN05-2BWY

    Mfr.#: ESDCAN05-2BWY

    OMO.#: OMO-ESDCAN05-2BWY-STMICROELECTRONICS

    		 TVS DIODE 36V 61V SOT323-3
    MCP2517FD-H/SL

    Mfr.#: MCP2517FD-H/SL

    OMO.#: OMO-MCP2517FD-H-SL-MICROCHIP-TECHNOLOGY

    		 STAND-ALONE CAN FD CONTROLLER W
    STD3N95K5AG

    Mfr.#: STD3N95K5AG

    OMO.#: OMO-STD3N95K5AG-STMICROELECTRONICS

    		 Trans MOSFET N-CH 950V 2A Automotive 3-Pin(2+Tab) DPAK T/R
    FCH023N65S3-F155

    Mfr.#: FCH023N65S3-F155

    OMO.#: OMO-FCH023N65S3-F155-ON-SEMICONDUCTOR

    		 MOSFET N-CH 650V 75A TO247
    उपलब्धता
    स्टक:
    443
    अर्डर मा:
    2426
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHS36N50D-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ६.९९
    US$ ६.९९
    10
    US$ ६.३०
    US$ ६३.००
    25
    US$ ५.७४
    US$ १४३.५०
    100
    US$ ५.१८
    US$ ५१८.००
    250
    US$ ४.७६
    US$ १ १९०.००
    500
    US$ ४.३४
    US$ २ १७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • Compare SIHS36N50D-E3
      Compare SIHS36N50D-E3
      SIHS20N50C vs SIHS20N50CE3 vs SIHS36N50D
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top