TGF2023-2-10

TGF2023-2-10
Mfr. #:
TGF2023-2-10
निर्माता:
Qorvo
विवरण:
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TGF2023-2-10 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
TGF2023-2-10 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
कोर्भो
उत्पादन कोटि:
आरएफ JFET ट्रान्जिस्टर
RoHS:
Y
ट्रान्जिस्टर प्रकार:
HEMT
प्रविधि:
GaN SiC
पाउनु:
18 dB
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
36 V
Vgs - गेट-स्रोत ब्रेकडाउन भोल्टेज:
145 V
आईडी - निरन्तर ड्रेन वर्तमान:
24 A
आउटपुट पावर:
260 W
अधिकतम ड्रेन गेट भोल्टेज:
48 V
अधिकतम परिचालन तापमान:
+ 250 C
Pd - शक्ति अपव्यय:
288 W
माउन्टिङ शैली:
SMD/SMT
प्याकेजिङ:
ट्रे
कन्फिगरेसन:
एकल
सञ्चालन आवृत्ति:
2 GHz
उत्पादन:
आरएफ पावर ट्रान्जिस्टर
शृङ्खला:
T1G
प्रकार:
GaN SiC HEMT
ब्रान्ड:
कोर्भो
नमी संवेदनशील:
हो
उत्पादन प्रकार:
आरएफ JFET ट्रान्जिस्टर
कारखाना प्याक मात्रा:
25
उपश्रेणी:
ट्रान्जिस्टरहरू
भाग # उपनाम:
1110346
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 50 W, 11.5 dB, 28 V, DIE, GaN
***horized Procurement Solutions
OEMs, CMs ONLY (NO BROKERS)
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
TGF2023-2-10
DISTI # 772-TGF2023-2-10
QorvoRF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RoHS: Compliant
0
  • 50:$71.5800
  • 100:$63.2500
1099951
DISTI # TGF2023-2-10
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$59.3200
छवि भाग # विवरण
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2021-04-SD T/R

Mfr.#: TGF2021-04-SD T/R

OMO.#: OMO-TGF2021-04-SD-T-R-318

RF JFET Transistors DC-4GHz 5Volts
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2022-48

Mfr.#: TGF2022-48

OMO.#: OMO-TGF2022-48-318

RF JFET Transistors DC-20GHz 4.8mm Pwr pHEMT (0.35um)
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20-318

RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SD-T/R

Mfr.#: TGF2021-04-SD-T/R

OMO.#: OMO-TGF2021-04-SD-T-R-1190

नयाँ र मौलिक
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

नयाँ र मौलिक
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
उपलब्धता
स्टक:
200
अर्डर मा:
2183
मात्रा प्रविष्ट गर्नुहोस्:
TGF2023-2-10 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
50
US$ ७१.५८
US$ ३ ५७९.००
100
US$ ६३.२५
US$ ६ ३२५.००
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