TGF2023-2-20

TGF2023-2-20
Mfr. #:
TGF2023-2-20
निर्माता:
Qorvo
विवरण:
RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TGF2023-2-20 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
TGF2023-2-20 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
TriQuint (Qorvo)
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
TGF
प्याकेजिङ
जेल प्याक
अंश-उपनामहरू
1099955
प्याकेज-केस
मर्नुहोस्
प्रविधि
GaN SiC
ट्रान्जिस्टर-प्रकार
HEMT
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
TGF2023-2-20
DISTI # 772-TGF2023-2-20
QorvoRF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
RoHS: Compliant
0
  • 50:$147.8300
छवि भाग # विवरण
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2021-12

Mfr.#: TGF2021-12

OMO.#: OMO-TGF2021-12-318

RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)
TGF2021-08

Mfr.#: TGF2021-08

OMO.#: OMO-TGF2021-08-318

RF JFET Transistors DC-12GHz 8mm Pwr pHEMT (0.35um)
TGF2023-2-01

Mfr.#: TGF2023-2-01

OMO.#: OMO-TGF2023-2-01-318

RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2021-12-XCC-2

Mfr.#: TGF2021-12-XCC-2

OMO.#: OMO-TGF2021-12-XCC-2-1190

नयाँ र मौलिक
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

नयाँ र मौलिक
TGF2022-2

Mfr.#: TGF2022-2

OMO.#: OMO-TGF2022-2-1190

नयाँ र मौलिक
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
TGF2023-20

Mfr.#: TGF2023-20

OMO.#: OMO-TGF2023-20-1152

RF JFET Transistors 20mm GaN Discrete
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
TGF2023-2-20 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २२१.७४
US$ २२१.७४
10
US$ २१०.६६
US$ २ १०६.५८
100
US$ १९९.५७
US$ १९ ९५७.०५
500
US$ १८८.४८
US$ ९४ २४१.६५
1000
US$ १७७.४०
US$ १७७ ३९६.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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