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IXXH40N65B4

IXXH40N65B4
Mfr. #:
IXXH40N65B4
निर्माता:
Littelfuse
विवरण:
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXXH40N65B4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXH40N65B4 DatasheetIXXH40N65B4 Datasheet (P4-P6)
ECAD Model:
थप जानकारी:
IXXH40N65B4 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247AD-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.5 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
120 A
Pd - शक्ति अपव्यय:
455 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
IXXH40N65
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
40 A
ब्रान्ड:
IXYS
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
30
उपश्रेणी:
IGBTs
व्यापार नाम:
XPT
एकाइ वजन:
0.158733 oz
Tags
IXXH40N65B, IXXH4, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IXXH40N65B4
DISTI # IXXH40N65B4-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$4.3707
IXXH40N65B4D1
DISTI # IXXH40N65B4D1-ND		IXYS CorporationIGBT
RoHS: Not compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.5533
IXXH40N65B4H1
DISTI # IXXH40N65B4H1-ND		IXYS CorporationIGBT 650V 120A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.5007
IXXH40N65B4
DISTI # 747-IXXH40N65B4		IXYS CorporationIGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
RoHS: Compliant		62
  • 1:$5.6000
  • 10:$5.0000
  • 25:$4.3700
  • 50:$4.1600
  • 100:$4.1000
  • 250:$3.7000
  • 500:$2.9100
  • 1000:$2.7200
  • 2500:$2.6200
IXXH40N65B4H1
DISTI # 747-IXXH40N65B4H1		IXYS CorporationIGBT Transistors
RoHS: Compliant		10
  • 1:$7.9300
  • 10:$7.1400
  • 25:$6.5000
  • 50:$5.9400
  • 100:$5.8700
  • 250:$5.3500
  • 500:$4.9200
  • 1000:$4.2800
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Mfr.#: SN74HC14N

OMO.#: OMO-SN74HC14N-TEXAS-INSTRUMENTS

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GBU6G

Mfr.#: GBU6G

OMO.#: OMO-GBU6G-ON-SEMICONDUCTOR

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Mfr.#: 1.5KE510CA

OMO.#: OMO-1-5KE510CA-LITTELFUSE

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उपलब्धता
स्टक:
62
अर्डर मा:
2045
मात्रा प्रविष्ट गर्नुहोस्:
IXXH40N65B4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.६०
US$ ५.६०
10
US$ ५.००
US$ ५०.००
25
US$ ४.३७
US$ १०९.२५
50
US$ ४.१६
US$ २०८.००
100
US$ ४.१०
US$ ४१०.००
250
US$ ३.७०
US$ ९२५.००
500
US$ २.९१
US$ १ ४५५.००
1000
US$ २.७२
US$ २ ७२०.००
2500
US$ २.६२
US$ ६ ५५०.००
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