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PSMN4R3-80ES,127

PSMN4R3-80ES,127
Mfr. #:
PSMN4R3-80ES,127
निर्माता:
Nexperia
विवरण:
MOSFET N-Ch 80V 4.3 mOhms
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
PSMN4R3-80ES,127 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PSMN4R3-80ES,127 DatasheetPSMN4R3-80ES,127 Datasheet (P4-P6)PSMN4R3-80ES,127 Datasheet (P7-P9)PSMN4R3-80ES,127 Datasheet (P10-P12)PSMN4R3-80ES,127 Datasheet (P13-P15)PSMN4R3-80ES,127 Datasheet (P16)
ECAD Model:
थप जानकारी:
PSMN4R3-80ES,127 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
नेक्सेरिया
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
I2PAK-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.3 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
104 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
306 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
ट्यूब
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
नेक्सेरिया
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.084199 oz
Tags
PSMN4R3-80E, PSMN4R3-8, PSMN4R3, PSMN4, PSMN, PSM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN4R3-80ES - N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
***et
Transistor MOSFET N-Channel 80V 120A 3-Pin TO-262
***et Europe
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
भाग # Mfg। विवरण स्टक मूल्य
PSMN4R3-80ES,127
DISTI # 1727-5280-ND		NexperiaMOSFET N-CH 80V 120A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube		Temporarily Out of Stock
  • 5000:$1.3913
PSMN4R3-80ES,127
DISTI # PSMN4R3-80ES,127		NexperiaTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN4R3-80ES,127)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 5000:$1.1900
  • 7000:$1.1900
  • 12000:$1.1900
  • 25000:$1.1900
  • 50000:$1.0900
PSMN4R3-80ES,127
DISTI # 771-PSMN4R380ES127		NexperiaMOSFET N-Ch 80V 4.3 mOhms
RoHS: Compliant		490
  • 1:$2.8700
  • 10:$2.4400
  • 100:$1.9500
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
PSMN4R3-80ES127NXP SemiconductorsNow Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant		540
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
छवि भाग # विवरण
PSMN4R3-30PL,127

Mfr.#: PSMN4R3-30PL,127

OMO.#: OMO-PSMN4R3-30PL-127

 MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET
PSMN4R3-30BL,118

Mfr.#: PSMN4R3-30BL,118

OMO.#: OMO-PSMN4R3-30BL-118

 MOSFET Std N-chanMOSFET
PSMN4R3-80PS,127

Mfr.#: PSMN4R3-80PS,127

OMO.#: OMO-PSMN4R3-80PS-127-NEXPERIA

 MOSFET N-CH 80V 120A TO220AB
PSMN4R3-100PS

Mfr.#: PSMN4R3-100PS

OMO.#: OMO-PSMN4R3-100PS-1190

 - Bulk (Alt: PSMN4R3-100PS)
PSMN4R3-30BL118

Mfr.#: PSMN4R3-30BL118

OMO.#: OMO-PSMN4R3-30BL118-1190

 - Bulk (Alt: PSMN4R3-30BL118)
PSMN4R3-30PL127

Mfr.#: PSMN4R3-30PL127

OMO.#: OMO-PSMN4R3-30PL127-1190

 Now Nexperia PSMN4R3-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN4R3-100PS,127

Mfr.#: PSMN4R3-100PS,127

OMO.#: OMO-PSMN4R3-100PS-127-NEXPERIA

 MOSFET N-Ch 100V 4.3 mo std level moSFET
PSMN4R3-80ES,127

Mfr.#: PSMN4R3-80ES,127

OMO.#: OMO-PSMN4R3-80ES-127-NEXPERIA

 MOSFET N-Ch 80V 4.3 mOhms
PSMN4R3-80ES127

Mfr.#: PSMN4R3-80ES127

OMO.#: OMO-PSMN4R3-80ES127-1190

 Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN4R3-30BL,118

Mfr.#: PSMN4R3-30BL,118

OMO.#: OMO-PSMN4R3-30BL-118-NEXPERIA

 MOSFET N-CH 30V 100A D2PAK
उपलब्धता
स्टक:
490
अर्डर मा:
2473
मात्रा प्रविष्ट गर्नुहोस्:
PSMN4R3-80ES,127 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.८७
US$ २.८७
10
US$ २.४४
US$ २४.४०
100
US$ १.९५
US$ १९५.००
500
US$ १.७१
US$ ८५५.००
1000
US$ १.४२
US$ १ ४२०.००
2500
US$ १.३२
US$ ३ ३००.००
5000
US$ १.२७
US$ ६ ३५०.००
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