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SQJ416EP-T1_GE3

SQJ416EP-T1_GE3
Mfr. #:
SQJ416EP-T1_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJ416EP-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ416EP-T1_GE3 DatasheetSQJ416EP-T1_GE3 Datasheet (P4-P6)SQJ416EP-T1_GE3 Datasheet (P7-P9)SQJ416EP-T1_GE3 Datasheet (P10-P12)
ECAD Model:
थप जानकारी:
SQJ416EP-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8L-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
27 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
22 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
20 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
45 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.13 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
22 S
पतन समय:
20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
11 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
एकाइ वजन:
0.017870 oz
Tags
SQJ41, SQJ4, SQJ
Service Guarantees

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SQJ416EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.९३
US$ ०.९३
10
US$ ०.७५
US$ ७.४६
100
US$ ०.५७
US$ ५६.६०
500
US$ ०.४७
US$ २३४.००
1000
US$ ०.३७
US$ ३७४.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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