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SI3447CDV-T1-E3

SI3447CDV-T1-E3
Mfr. #:
SI3447CDV-T1-E3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 12V 7.8A 3.0W 36mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3447CDV-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
आईसी चिप्स
प्याकेजिङ
रील
अंश-उपनामहरू
SI3447CDV-E3
एकाइ - वजन
0.000705 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TSOP-6
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 P-Channel
Pd-शक्ति-डिसिपेशन
2 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
20 ns
उदय-समय
40 ns
Vgs-गेट-स्रोत-भोल्टेज
8 V
आईडी-निरन्तर-नाली-वर्तमान
6.3 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 12 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
36 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
35 ns
सामान्य-टर्न-अन-डिले-समय
20 ns
च्यानल-मोड
वृद्धि
Tags
SI3447CDV-T, SI3447C, SI3447, SI344, SI34, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 12 V 0.068 Ohm 18 nC 2 W Silicon Surface Mount Mosfet - SC-74
***ical
Trans MOSFET P-CH 12V 6.3A 6-Pin TSOP T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-7800mA; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.068ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI3447CDV-T1-E3
DISTI # SI3447CDV-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 12V 7.8A 6TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1In Stock
  • 1:$0.7500
SI3447CDV-T1-E3
DISTI # SI3447CDV-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 12V 7.8A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3447CDV-T1-E3
    DISTI # SI3447CDV-T1-E3DKR-ND    		Vishay SiliconixMOSFET P-CH 12V 7.8A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI3447CDV-T1-E3
      DISTI # 781-SI3447CDV-E3      		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs TSOP-6
      RoHS: Compliant      		0
        SI3447CDV-T1-E3
        DISTI # 1684051        		Vishay IntertechnologiesMOSFET, P, TSOP-6
        RoHS: Compliant        		0
        • 5:£0.6610
        • 25:£0.5920
        • 100:£0.5900
        • 250:£0.5450
        • 500:£0.4990
        छवि भाग # विवरण
        SI3447CDV-T1-E3

        Mfr.#: SI3447CDV-T1-E3

        OMO.#: OMO-SI3447CDV-T1-E3

        		 MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3
        SI3447CDV-T1-E3

        Mfr.#: SI3447CDV-T1-E3

        OMO.#: OMO-SI3447CDV-T1-E3-VISHAY

        		 IGBT Transistors MOSFET 12V 7.8A 3.0W 36mohm @ 4.5V
        SI3447CDV

        Mfr.#: SI3447CDV

        OMO.#: OMO-SI3447CDV-1190

        		 नयाँ र मौलिक
        SI3447CDV-T1-GE3

        Mfr.#: SI3447CDV-T1-GE3

        OMO.#: OMO-SI3447CDV-T1-GE3-VISHAY

        		 MOSFET P-CH 12V 7.8A 6-TSOP
        SI3447CDVT1GE3

        Mfr.#: SI3447CDVT1GE3

        OMO.#: OMO-SI3447CDVT1GE3-1190

        		 Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        SI3447CDV-T1-G

        Mfr.#: SI3447CDV-T1-G

        OMO.#: OMO-SI3447CDV-T1-G-1190

        		 नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        2000
        मात्रा प्रविष्ट गर्नुहोस्:
        SI3447CDV-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.९९
        US$ ०.९९
        10
        US$ ०.९४
        US$ ९.४०
        100
        US$ ०.८९
        US$ ८९.१०
        500
        US$ ०.८४
        US$ ४२०.७५
        1000
        US$ ०.७९
        US$ ७९२.००
        बाट सुरु गर्नुहोस्
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