SISH617DN-T1-GE3

Mfr. #:: SISH617DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SISH617DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SISH617DN-T1-GE3 Datasheet SISH617DN-T1-GE3 Datasheet (P4-P6)SISH617DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:: SISH617DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 35 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 12.3 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2.5 V

Vgs - गेट-स्रोत भोल्टेज:: 25 V

Qg - गेट चार्ज:: 59 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 52 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

शृङ्खला:: SIS

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 35 S

पतन समय:: 9 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 9 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 32 ns

सामान्य टर्न-अन ढिलाइ समय:: 11 ns

Tags: SISH6, SISH, SIS

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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SISH617DN-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SISH617DN-T1-GE3 DISTI # SISH617DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5740In Stock	1000:$0.3942 500:$0.4993 100:$0.6045 10:$0.7750 1:$0.8700
SISH617DN-T1-GE3 DISTI # SISH617DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5740In Stock	1000:$0.3942 500:$0.4993 100:$0.6045 10:$0.7750 1:$0.8700
SISH617DN-T1-GE3 DISTI # SISH617DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CHAN 30V POWERPAK 1212- RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.3402 6000:$0.3444 3000:$0.3700
SISH617DN-T1-GE3 DISTI # SISH617DN-T1-GE3	Vishay Intertechnologies	P-CHANEL 30 V (D-S) MOSFET 12.3 MO @ 10V MO @ 7.5V 22.2 MO @ 4.5V - Tape and Reel (Alt: SISH617DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.3109 30000:$0.3199 18000:$0.3289 12000:$0.3429 6000:$0.3529
SISH617DN-T1-GE3 DISTI # 59AC7451	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.3140 30000:$0.3280 20000:$0.3530 10000:$0.3770 5000:$0.4090 1:$0.4180
SISH617DN-T1-GE3 DISTI # 78AC6532	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes	5975	1000:$0.3930 500:$0.4910 250:$0.5430 100:$0.5950 50:$0.6580 25:$0.7210 10:$0.7840 1:$0.9800
SISH617DN-T1-GE3 DISTI # 78-SISH617DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 RoHS: Compliant	8813	1:$0.9600 10:$0.7750 100:$0.5880 500:$0.4860 1000:$0.3880 3000:$0.3520 6000:$0.3280 9000:$0.3150 24000:$0.3030
SISH617DN-T1-GE3 DISTI # 1783697	Vishay Intertechnologies	P-CHANEL 30 V (D-S) MOSFET POWERPAK 1212, RL	6000	3000:£0.2600
SISH617DN-T1-GE3 DISTI # 2932960	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W RoHS: Compliant	5975	1000:$0.5640 500:$0.5950 250:$0.7020 100:$0.8530 10:$1.0900 1:$1.3200
SISH617DN-T1-GE3 DISTI # 2932960	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W	5975	500:£0.3560 250:£0.3940 100:£0.4320 25:£0.5700 5:£0.6360

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BQ24616RGET OMO.#: OMO-BQ24616RGET	Battery Management Sync Sw-Mode Li-Ion Li-Poly Batt Chrgr
	Mfr.#: VS-8CVH01HM3/I OMO.#: OMO-VS-8CVH01HM3-I	Rectifiers 100V 8A SlimDPAK Fred
	Mfr.#: VS-10CVH01HM3/I OMO.#: OMO-VS-10CVH01HM3-I	Rectifiers 100V 10A SlimDPAK Fred
	Mfr.#: SIS412DN-T1-GE3 OMO.#: OMO-SIS412DN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: TPS70933DRVT OMO.#: OMO-TPS70933DRVT	LDO Voltage Regulators 150mA 30V Ultra-Low IQ Wide Inpt LDO Reg
	Mfr.#: VEMD5510C OMO.#: OMO-VEMD5510C	Photodiodes 550nm 0.6uA 440-700nm 80pF
	Mfr.#: DRV8873SPWPR OMO.#: OMO-DRV8873SPWPR-TEXAS-INSTRUMENTS	SENSOR MAGNETIC HALL EFFECT
	Mfr.#: SIS412DN-T1-GE3 OMO.#: OMO-SIS412DN-T1-GE3-VISHAY	MOSFET N-CH 30V 12A 1212-8 PPAK
	Mfr.#: VS-10CVH01HM3/I OMO.#: OMO-VS-10CVH01HM3-I-VISHAY	DIODE GEN PURPOSE 100V SLIMDPAK
	Mfr.#: VS-8CVH01HM3/I OMO.#: OMO-VS-8CVH01HM3-I-VISHAY	DIODE GEN PURPOSE 100V SLIMDPAK

उपलब्धता

स्टक:: Available
अर्डर मा:: 1991
मात्रा प्रविष्ट गर्नुहोस्:

SISH617DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.९६~~; ~~US$ ०.९६~~

10: ~~US$ ०.७८~~; ~~US$ ७.७५~~

100: ~~US$ ०.५९~~; ~~US$ ५८.८०~~

500: ~~US$ ०.४९~~; ~~US$ २४३.००~~

1000: ~~US$ ०.३९~~; ~~US$ ३८८.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

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SISH617DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes