SiSA26DN-T1-GE3

Mfr. #:: SiSA26DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 25V Vds 16V Vgs PowerPAK 1212-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SiSA26DN-T1-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SiSA26DN-T1-GE3 Datasheet SiSA26DN-T1-GE3 Datasheet (P4-P6)SiSA26DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:: SiSA26DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 25 V

आईडी - निरन्तर ड्रेन वर्तमान:: 60 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 2.15 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1 V

Vgs - गेट-स्रोत भोल्टेज:: 16 V, - 12 V

Qg - गेट चार्ज:: 44 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 39 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: रील

शृङ्खला:: SiSA26DN

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 88 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 23 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 16 ns

सामान्य टर्न-अन ढिलाइ समय:: 9 ns

Tags: SISA, SIS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SiSA26DN-T1-GE3 विवरण

***et: TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 25V 29.1A 8-Pin PowerPAK 1212 EP T/R

***i-Key: MOSFET N-CH 25V 60A POWERPAK1212

***ark: Mosfet, N-Ch, 25V, 60A, 150Deg C, 39W; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.00215Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:39W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANAL N, 25V, 60A, 150°C, 39W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00215ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.5V; Dissipazione di Potenza Pd:39W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SiSA26DN-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SISA26DN-T1-GE3 DISTI # V72:2272_21388883	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	6000	75000:$0.2871 30000:$0.2901 15000:$0.2932 6000:$0.2963 3000:$0.2994 1000:$0.3261 500:$0.4122 250:$0.4599 100:$0.5110 50:$0.5923 25:$0.6581 10:$0.7377 1:$0.9122
SISA26DN-T1-GE3 DISTI # V99:2348_21388883	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	0	6000000:$0.3107 3000000:$0.3109 600000:$0.3155 60000:$0.3218 6000:$0.3228
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5631In Stock	1000:$0.3668 500:$0.4586 100:$0.5801 10:$0.7570 1:$0.8600
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5631In Stock	1000:$0.3668 500:$0.4586 100:$0.5801 10:$0.7570 1:$0.8600
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 25V 60A POWERPAK1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.2820 15000:$0.2894 6000:$0.3005 3000:$0.3228
SISA26DN-T1-GE3 DISTI # 31355217	Vishay Intertechnologies	N-Channel 25 V (D-S) MOSFET	6000	15000:$0.2932 6000:$0.2963 3000:$0.2994 1000:$0.3261 500:$0.4122 250:$0.4599 100:$0.5110 50:$0.5923 25:$0.6581 22:$0.7377
SISA26DN-T1-GE3 DISTI # SISA26DN-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA26DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.2709 30000:$0.2789 18000:$0.2869 12000:$0.2989 6000:$0.3079
SISA26DN-T1-GE3 DISTI # 81AC2791	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00215ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes	6040	1000:$0.3430 500:$0.4280 250:$0.4740 100:$0.5190 50:$0.5740 25:$0.6290 10:$0.6840 1:$0.8480
SISA26DN-T1-GE3 DISTI # 59AC7446	Vishay Intertechnologies	N-CHANNEL 25-V (D-S) MOSFET	0	50000:$0.2740 30000:$0.2870 20000:$0.3080 10000:$0.3290 5000:$0.3570 1:$0.3650
SiSA26DN-T1-GE3 DISTI # 78-SISA26DN-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 16V Vgs PowerPAK 1212-8 RoHS: Compliant	5895	1:$0.8400 10:$0.6770 100:$0.5140 500:$0.4240 1000:$0.3400 3000:$0.3080
SISA26DN-T1-GE3 DISTI # 2932955	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W	6045	500:£0.3070 250:£0.3400 100:£0.3720 10:£0.5390 1:£0.6960
SISA26DN-T1-GE3 DISTI # 2932955	Vishay Intertechnologies	MOSFET, N-CH, 25V, 60A, 150DEG C, 39W RoHS: Compliant	6040	1000:$0.4720 500:$0.4990 250:$0.5870 100:$0.7140 10:$0.9090 1:$1.1000

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: OPA690IDBVT OMO.#: OMO-OPA690IDBVT	High Speed Operational Amplifiers Wideband Voltage Feeback
	Mfr.#: FDMC2D8N025S OMO.#: OMO-FDMC2D8N025S	MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin
	Mfr.#: LTC3854EMSE#PBF OMO.#: OMO-LTC3854EMSE-PBF	Switching Voltage Regulators Small Footprint, Low Pin Count Synchronous Step-Down Controller with Wide Vin Range
	Mfr.#: MMZ1608B301CTAH0 OMO.#: OMO-MMZ1608B301CTAH0	Ferrite Beads 300 OHM 25%
	Mfr.#: NVTFS5C471NLTAG OMO.#: OMO-NVTFS5C471NLTAG	MOSFET AFSM T6 40V LL U8FL
	Mfr.#: 107RZM050M OMO.#: OMO-107RZM050M-ILLINOIS-CAPACITOR	Aluminum Electrolytic Capacitors - Leaded 100uF 50V 20%
	Mfr.#: OPA690IDBVT OMO.#: OMO-OPA690IDBVT-TEXAS-INSTRUMENTS	IC OPAMP VFB 300MHZ SOT23-6
	Mfr.#: REA471M1EBK-1012P OMO.#: OMO-REA471M1EBK-1012P-1130	Aluminum Electrolytic Capacitors - Leaded 25V 470uF 20% 10x12.5 mm
	Mfr.#: MMZ1608B301CTAH0 OMO.#: OMO-MMZ1608B301CTAH0-TDK	EMI Filter Beads, Chips & Arrays 300 OHM 25%
	Mfr.#: FDMC2D8N025S OMO.#: OMO-FDMC2D8N025S-ON-SEMICONDUCTOR	MOSFET N-CH 25V 124A 8PQFN

उपलब्धता

स्टक:: Available
अर्डर मा:: 1988
मात्रा प्रविष्ट गर्नुहोस्:

SiSA26DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

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SiSA26DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes