SI1922EDH-T1-GE3

SI1922EDH-T1-GE3
Mfr. #:
SI1922EDH-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V Vds 8V Vgs SC70-6
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI1922EDH-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1922EDH-T1-GE3 DatasheetSI1922EDH-T1-GE3 Datasheet (P4-P6)SI1922EDH-T1-GE3 Datasheet (P7-P9)SI1922EDH-T1-GE3 Datasheet (P10-P12)
ECAD Model:
थप जानकारी:
SI1922EDH-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-363-6
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
20 V
आईडी - निरन्तर ड्रेन वर्तमान:
1.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
198 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
400 mV
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
2.5 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
1.25 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1 mm
लम्बाइ:
2.1 mm
शृङ्खला:
SI1
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
1.25 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
4 S
पतन समय:
220 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
80 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
480 ns
सामान्य टर्न-अन ढिलाइ समय:
43 ns
भाग # उपनाम:
SI1988DH-T1-GE3
एकाइ वजन:
0.000265 oz
Tags
SI1922EDH-T1, SI1922EDH-T, SI1922, SI192, SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor; 1.3 A; 20 V; 6-Pin SOT-363
***et Europe
Transistor MOSFET Array Dual N-CH 20V 1.3A 6-Pin SC-70 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.165Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No
***nell
MOSFET, NN CH, 20V, 1.3A, SOT363; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):0.165ohm; Power Dissipation Pd:1.25W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI1922EDH-T1-GE3
DISTI # V36:1790_09216775
Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
RoHS: Compliant
0
  • 3000000:$0.1227
  • 1500000:$0.1229
  • 300000:$0.1315
  • 30000:$0.1444
  • 3000:$0.1465
SI1922EDH-T1-GE3
DISTI # V72:2272_09216775
Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
RoHS: Compliant
0
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3CT-ND
    Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    40575In Stock
    • 1000:$0.1655
    • 500:$0.2141
    • 100:$0.2725
    • 10:$0.3650
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    40575In Stock
    • 1000:$0.1655
    • 500:$0.2141
    • 100:$0.2725
    • 10:$0.3650
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3TR-ND
    Vishay SiliconixMOSFET 2N-CH 20V 1.3A SOT-363
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    39000In Stock
    • 75000:$0.1197
    • 30000:$0.1210
    • 15000:$0.1276
    • 6000:$0.1370
    • 3000:$0.1465
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 15000
    • 150000:$0.1178
    • 75000:$0.1198
    • 30000:$0.1219
    • 15000:$0.1263
    • 9000:$0.1309
    • 6000:$0.1360
    • 3000:$0.1414
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1922EDH-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.0949
    • 18000:$0.0979
    • 12000:$0.0999
    • 6000:$0.1049
    • 3000:$0.1079
    SI1922EDH-T1-GE3
    DISTI # SI1922EDH-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1039
    • 18000:€0.1109
    • 12000:€0.1209
    • 6000:€0.1399
    • 3000:€0.2059
    SI1922EDH-T1-GE3
    DISTI # 65T1686
    Vishay IntertechnologiesTrans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65T1686)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1000:$0.1540
    • 500:$0.1990
    • 250:$0.2210
    • 100:$0.2420
    • 50:$0.2840
    • 25:$0.3250
    • 1:$0.4300
    SI1922EDH-T1-GE3
    DISTI # 65T1686
    Vishay IntertechnologiesDual MOSFET, Dual N Channel, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV RoHS Compliant: Yes0
    • 1000:$0.1560
    • 500:$0.2010
    • 250:$0.2230
    • 100:$0.2440
    • 50:$0.2860
    • 25:$0.3280
    • 1:$0.4340
    SI1922EDH-T1-GE3
    DISTI # 64T4056
    Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes860
    • 1000:$0.1840
    • 500:$0.2290
    • 250:$0.2510
    • 100:$0.2720
    • 50:$0.3140
    • 25:$0.3560
    • 1:$0.4620
    SI1922EDH-T1-GE3.
    DISTI # 28AC2118
    Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1.25W RoHS Compliant: No0
    • 30000:$0.0980
    • 18000:$0.1000
    • 12000:$0.1030
    • 6000:$0.1080
    • 1:$0.1110
    SI1922EDH-T1-GE3
    DISTI # 70616150
    Vishay SiliconixSI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor,1.3 A,20 V,6-Pin SOT-363
    RoHS: Compliant
    0
    • 300:$0.2700
    • 600:$0.2320
    • 1500:$0.2030
    • 3000:$0.1830
    SI1922EDH-T1-GE3
    DISTI # 78-SI1922EDH-T1-GE3
    Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs SC70-6
    RoHS: Compliant
    14142
    • 1:$0.4200
    • 10:$0.3240
    • 100:$0.2410
    • 500:$0.1980
    • 1000:$0.1530
    • 3000:$0.1390
    • 6000:$0.1300
    • 9000:$0.1210
    • 24000:$0.1150
    SI1922EDH-T1-GE3
    DISTI # 8123091P
    Vishay IntertechnologiesTRANS MOSFET N-CH 20V 1.3A 6-PIN, RL4550
    • 3000:£0.1100
    • 1500:£0.1150
    • 600:£0.1440
    • 300:£0.1820
    SI1922EDH-T1-GE3
    DISTI # TMOS2002
    Vishay IntertechnologiesDual N-CH 20V 1,3A/4,5V SOT363
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.1821
    • 6000:$0.1717
    • 9000:$0.1612
    • 12000:$0.1456
    • 18000:$0.1404
    SI1922EDH-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs SC70-6
    RoHS: Compliant
    Americas - 24000
      SI1922EDH-T1-GE3
      DISTI # 2056714
      Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363
      RoHS: Compliant
      860
      • 3000:$0.2280
      • 1000:$0.2320
      • 500:$0.3000
      • 100:$0.3650
      • 10:$0.4900
      • 1:$0.6480
      SI1922EDH-T1-GE3
      DISTI # 2056714RL
      Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT363
      RoHS: Compliant
      0
      • 3000:$0.2280
      • 1000:$0.2320
      • 500:$0.3000
      • 100:$0.3650
      • 10:$0.4900
      • 1:$0.6480
      SI1922EDH-T1-GE3
      DISTI # 2056714
      Vishay IntertechnologiesMOSFET, NN CH, 20V, 1.3A, SOT3631755
      • 500:£0.1540
      • 250:£0.1700
      • 100:£0.1860
      • 25:£0.2730
      • 5:£0.2850
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      SENSOR RH PRESSURE TEMP VOC
      उपलब्धता
      स्टक:
      17
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI1922EDH-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.४२
      US$ ०.४२
      10
      US$ ०.३२
      US$ ३.२४
      100
      US$ ०.२४
      US$ २४.१०
      500
      US$ ०.२०
      US$ ९९.००
      1000
      US$ ०.१५
      US$ १५३.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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