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SISS27DN-T1-GE3

SISS27DN-T1-GE3
Mfr. #:
SISS27DN-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SISS27DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SISS27DN-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
FETs - एकल
शृङ्खला
SISxxxDN
प्याकेजिङ
रील
माउन्टिङ-शैली
SMD/SMT
ट्रेडनेम
TrenchFET पावर MOSFET
प्याकेज-केस
PowerPAK-1212-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 P-Channel
Pd-शक्ति-डिसिपेशन
57 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
20 ns
उदय-समय
45 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
- 50 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
- 30 V
Vgs-th-गेट-स्रोत-थ्रेसहोल्ड-भोल्टेज
- 1 V to - 2.2 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
5.6 mOhms
ट्रान्जिस्टर-ध्रुवता
P- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
50 ns
सामान्य-टर्न-अन-डिले-समय
60 ns
Qg-गेट-चार्ज
45 nC
फर्वार्ड-ट्रान्सकन्डक्टन्स-न्यूनतम
52 S
च्यानल-मोड
वृद्धि
Tags
SISS27D, SISS27, SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
भाग # Mfg। विवरण स्टक मूल्य
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3402
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3099
  • 6000:$0.3009
  • 12000:$0.2889
  • 18000:$0.2809
  • 30000:$0.2729
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISS27DN-T1-GE3
    DISTI # 99W9575    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
    • 1:$0.3670
    • 5000:$0.3590
    • 10000:$0.3310
    • 20000:$0.3100
    • 30000:$0.2880
    • 50000:$0.2760
    SISS27DN-T1-GE3
    DISTI # 70459595    		Vishay SiliconixSISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212
    RoHS: Compliant    		0
    • 3000:$0.9590
    SISS27DN-T1-GE3
    DISTI # 78-SISS27DN-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		0
    • 1:$0.8500
    • 10:$0.6810
    • 100:$0.5170
    • 500:$0.4270
    • 1000:$0.3420
    • 3000:$0.3100
    SISS27DN-T1-GE3
    DISTI # 8141323    		Vishay IntertechnologiesTRANS MOSFET P-CH 30V 23A, PK100
    • 20:£0.1870
    • 100:£0.1840
    SISS27DN-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8SAmericas - Stock
      छवि भाग # विवरण
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3

      		 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
      SISS27DN

      Mfr.#: SISS27DN

      OMO.#: OMO-SISS27DN-1190

      		 नयाँ र मौलिक
      SISS27DN-T1-G3

      Mfr.#: SISS27DN-T1-G3

      OMO.#: OMO-SISS27DN-T1-G3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3000
      मात्रा प्रविष्ट गर्नुहोस्:
      SISS27DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.४१
      US$ ०.४१
      10
      US$ ०.३९
      US$ ३.८९
      100
      US$ ०.३७
      US$ ३६.८४
      500
      US$ ०.३५
      US$ १७३.९५
      1000
      US$ ०.३३
      US$ ३२७.५०
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
      बाट सुरु गर्नुहोस्
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