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SIHB35N60EF-GE3

SIHB35N60EF-GE3
Mfr. #:
SIHB35N60EF-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB35N60EF-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHB35N60EF-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
32 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
97 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
134 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
शृङ्खला:
EF
ट्रान्जिस्टर प्रकार:
1 N-Channel EF-Series Power MOSFET
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
8 S
पतन समय:
61 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
85 ns
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
96 ns
सामान्य टर्न-अन ढिलाइ समय:
28 ns
Tags
SIHB3, SIHB, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
भाग # Mfg। विवरण स्टक मूल्य
SIHB35N60EF-GE3
DISTI # V99:2348_22712078		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 1:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH D2PAK TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		1045In Stock
  • 2500:$3.2399
  • 1000:$3.4104
  • 500:$4.0438
  • 100:$4.7502
  • 10:$5.7980
  • 1:$6.4600
SIHB35N60EF-GE3
DISTI # 32868259		Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 2:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies(Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.5900
  • 500:€2.6900
  • 50:€2.7900
  • 100:€2.7900
  • 25:€3.0900
  • 10:€3.7900
  • 1:€4.8900
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.8900
  • 6000:$2.9900
  • 4000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
SIHB35N60EF-GE3
DISTI # 99AC9553		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes50
  • 500:$3.8900
  • 250:$4.3300
  • 100:$4.4700
  • 50:$4.7900
  • 25:$5.1100
  • 10:$5.4300
  • 1:$6.5500
SIHB35N60EF-GE3
DISTI # 78-SIHB35N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1050
  • 1:$6.4900
  • 10:$5.3800
  • 100:$4.4300
  • 250:$4.2900
  • 500:$3.8500
  • 1000:$3.2400
  • 2500:$3.0800
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263
RoHS: Compliant		50
  • 1000:$4.1200
  • 500:$4.5300
  • 250:$5.0800
  • 100:$5.3200
  • 10:$6.3700
  • 1:$8.1700
SIHB35N60EF-GE3
DISTI # 3019078		Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-26350
  • 500:£2.7900
  • 250:£3.1200
  • 100:£3.2100
  • 10:£3.9000
  • 1:£5.1800
छवि भाग # विवरण
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB35N60E-GE3

Mfr.#: SIHB35N60E-GE3

OMO.#: OMO-SIHB35N60E-GE3-VISHAY

 MOSFET N-CH 600V 32A D2PAK TO263
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3-VISHAY

 EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SIHB35N60EF-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.४९
US$ ६.४९
10
US$ ५.३८
US$ ५३.८०
100
US$ ४.४३
US$ ४४३.००
250
US$ ४.२९
US$ १ ०७२.५०
500
US$ ३.८५
US$ १ ९२५.००
1000
US$ ३.२४
US$ ३ २४०.००
2500
US$ ३.०८
US$ ७ ७००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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