OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

SIDR392DP-T1-GE3

SIDR392DP-T1-GE3
Mfr. #:
SIDR392DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR392DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR392DP-T1-GE3 DatasheetSIDR392DP-T1-GE3 Datasheet (P4-P6)SIDR392DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIDR392DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8DC-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
620 uOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
125 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SID
ट्रान्जिस्टर प्रकार:
1 N-Channel1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
125 S
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
23 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
41 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
Tags
SIDR3, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
भाग # Mfg। विवरण स्टक मूल्य
SIDR392DP-T1-GE3
DISTI # V72:2272_21764846		Vishay IntertechnologiesSIDR392DP-T1-GE30
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.2285
    • 3000:$1.2439
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.3761
    • 500:$1.6608
    • 100:$2.0214
    • 10:$2.5150
    • 1:$2.8000
    SIDR392DP-T1-GE3
    DISTI # SIDR392DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 30V
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.3761
    • 500:$1.6608
    • 100:$2.0214
    • 10:$2.5150
    • 1:$2.8000
    SIDR392DP-T1-GE3
    DISTI # 59AC7335    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$1.1000
    • 6000:$1.1400
    • 4000:$1.1900
    • 2000:$1.3200
    • 1000:$1.3900
    • 1:$1.4800
    SIDR392DP-T1-GE3
    DISTI # 78AC6500    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,PowerRoHS Compliant: Yes0
    • 500:$1.5500
    • 250:$1.6600
    • 100:$1.7700
    • 50:$1.9400
    • 25:$2.1100
    • 10:$2.2800
    • 1:$2.7500
    SIDR392DP-T1-GE3
    DISTI # 78-SIDR392DP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.7200
    • 10:$2.2600
    • 100:$1.7500
    • 500:$1.5300
    • 1000:$1.2700
    • 3000:$1.1800
    SIDR392DP-T1-GE3
    DISTI # 2932895    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W0
    • 500:£1.1200
    • 250:£1.2000
    • 100:£1.2800
    • 10:£1.6600
    • 1:£2.2400
    SIDR392DP-T1-GE3
    DISTI # 2932895    		Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$2.0100
    • 500:$2.1300
    • 250:$2.2500
    • 100:$2.4500
    • 10:$2.8300
    • 1:$3.2400
    छवि भाग # विवरण
    SIDR392DP-T1-GE3

    Mfr.#: SIDR392DP-T1-GE3

    OMO.#: OMO-SIDR392DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8DC
    SIDR392DP-T1-GE3

    Mfr.#: SIDR392DP-T1-GE3

    OMO.#: OMO-SIDR392DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 30V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIDR392DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.७२
    US$ २.७२
    10
    US$ २.२६
    US$ २२.६०
    100
    US$ १.७५
    US$ १७५.००
    500
    US$ १.५३
    US$ ७६५.००
    1000
    US$ १.२७
    US$ १ २७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SIDR392DP-T1-GE3
      Compare SIDR392DP-T1-GE3
      SIDR390DPT1GE3 vs SIDR390DPT1RE3 vs SIDR392DPT1GE3
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top