SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3
Mfr. #:
SIHJ240N60E-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds; +/-30V Vgs PowerPAK SO-8L
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHJ240N60E-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ240N60E-T1-GE3 DatasheetSIHJ240N60E-T1-GE3 Datasheet (P4-P6)SIHJ240N60E-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHJ240N60E-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
240 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
23 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
89 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
4 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
14 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
26 ns
सामान्य टर्न-अन ढिलाइ समय:
15 ns
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHJ240N60E-T1-GE3
DISTI # V99:2348_22587817
Vishay IntertechnologiesE Series Power MOSFET PowerPAK SO-8L, 240 m @ 10V0
    SIHJ240N60E-T1-GE3
    DISTI # SIHJ240N60E-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHAN 600V PPAK SO-8L
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    3000In Stock
    • 6000:$1.2964
    • 3000:$1.3126
    SIHJ240N60E-T1-GE3
    DISTI # SIHJ240N60E-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHAN 600V PPAK SO-8L
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    3000In Stock
    • 1000:$1.4521
    • 500:$1.7526
    • 100:$2.1331
    • 10:$2.6540
    • 1:$2.9500
    SIHJ240N60E-T1-GE3
    DISTI # SIHJ240N60E-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHAN 600V PPAK SO-8L
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    3000In Stock
    • 1000:$1.4521
    • 500:$1.7526
    • 100:$2.1331
    • 10:$2.6540
    • 1:$2.9500
    SIHJ240N60E-T1-GE3
    DISTI # SIHJ240N60E-T1-GE3
    Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHJ240N60E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$1.0900
    • 12000:$1.1900
    • 18000:$1.1900
    • 3000:$1.2900
    • 6000:$1.2900
    SIHJ240N60E-T1-GE3
    DISTI # 99AC0539
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, 150DEG C, 89W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.208ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes0
    • 500:$1.6400
    • 250:$1.7500
    • 100:$1.8700
    • 50:$2.0500
    • 25:$2.2300
    • 10:$2.4100
    • 1:$2.9000
    SIHJ240N60E-T1-GE3
    DISTI # 81AC3464
    Vishay IntertechnologiesN-CHANNEL 600V0
    • 10000:$1.1600
    • 6000:$1.2100
    • 4000:$1.2500
    • 2000:$1.3900
    • 1000:$1.4700
    • 1:$1.5600
    SIHJ240N60E-T1-GE3
    DISTI # 78-SIHJ240N60E-T1GE3
    Vishay IntertechnologiesMOSFET 600V Vds,+/-30V Vgs PowerPAK SO-8L
    RoHS: Compliant
    0
    • 1:$2.8700
    • 10:$2.3900
    • 100:$1.8500
    • 500:$1.6200
    • 1000:$1.3400
    • 3000:$1.2500
    • 6000:$1.2000
    SIHJ240N60E-T1-GE3
    DISTI # 3014146
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, 150DEG C, 89W0
    • 500:£1.3400
    • 250:£1.5400
    • 100:£1.7300
    • 10:£2.1500
    • 1:£2.6800
    SIHJ240N60E-T1-GE3
    DISTI # 3014146
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 12A, 150DEG C, 89W
    RoHS: Compliant
    0
    • 1000:$1.6000
    • 500:$1.7900
    • 250:$1.9900
    • 100:$2.1500
    • 10:$2.6900
    • 1:$3.4700
    छवि भाग # विवरण
    SIHJ240N60E-T1-GE3

    Mfr.#: SIHJ240N60E-T1-GE3

    OMO.#: OMO-SIHJ240N60E-T1-GE3

    MOSFET 600V Vds; +/-30V Vgs PowerPAK SO-8L
    SIHJ240N60E-T1-GE3

    Mfr.#: SIHJ240N60E-T1-GE3

    OMO.#: OMO-SIHJ240N60E-T1-GE3-VISHAY

    MOSFET N-CHAN 600V PPAK SO-8L
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3500
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHJ240N60E-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.८७
    US$ २.८७
    10
    US$ २.३९
    US$ २३.९०
    100
    US$ १.८५
    US$ १८५.००
    500
    US$ १.६२
    US$ ८१०.००
    1000
    US$ १.३४
    US$ १ ३४०.००
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    Top