SGW5N60RUFDTM

SGW5N60RUFDTM
Mfr. #:
SGW5N60RUFDTM
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SGW5N60RUFDTM डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
D2PAK-3
माउन्टिङ शैली:
SMD/SMT
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.5 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
8 A
Pd - शक्ति अपव्यय:
60 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
रील
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
8 A
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
चौडाइ:
9.65 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
800
उपश्रेणी:
IGBTs
एकाइ वजन:
0.079014 oz
Tags
SGW5N, SGW5, SGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 600V 8A 60W D2PAK
भाग # Mfg। विवरण स्टक मूल्य
SGW5N60RUFDTM
DISTI # SGW5N60RUFDTM-ND
ON SemiconductorIGBT 600V 8A 60W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    SGW5N60RUFDTM
    DISTI # SGW5N60RUFDTM
    ON Semiconductor- Bulk (Alt: SGW5N60RUFDTM)
    RoHS: Not Compliant
    Min Qty: 391
    Container: Bulk
    Americas - 0
    • 3910:$0.7899
    • 1955:$0.8099
    • 1173:$0.8199
    • 782:$0.8309
    • 391:$0.8359
    SGW5N60RUFDTM
    DISTI # 512-SGW5N60RUFDTM
    ON SemiconductorIGBT Transistors
    RoHS: Compliant
    0
      SGW5N60RUFDTMFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant
      291
      • 1000:$0.8400
      • 500:$0.8900
      • 100:$0.9200
      • 25:$0.9600
      • 1:$1.0400
      छवि भाग # विवरण
      SGW5N60RUFDTM

      Mfr.#: SGW5N60RUFDTM

      OMO.#: OMO-SGW5N60RUFDTM

      IGBT Transistors
      SGW5N60RUF

      Mfr.#: SGW5N60RUF

      OMO.#: OMO-SGW5N60RUF-1190

      नयाँ र मौलिक
      SGW5N60RUFD

      Mfr.#: SGW5N60RUFD

      OMO.#: OMO-SGW5N60RUFD-1190

      नयाँ र मौलिक
      SGW5N60RUFDTM

      Mfr.#: SGW5N60RUFDTM

      OMO.#: OMO-SGW5N60RUFDTM-ON-SEMICONDUCTOR

      IGBT 600V 8A 60W D2PAK
      SGW5N60RUFTM

      Mfr.#: SGW5N60RUFTM

      OMO.#: OMO-SGW5N60RUFTM-1190

      नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      SGW5N60RUFDTM को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      बाट सुरु गर्नुहोस्
      नवीनतम उत्पादनहरू
      • Gate Drivers
        The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
      • NCP137 700 mA LDO Regulators
        ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
      • NCP114 Low Dropout Regulators
        ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
      • Compare SGW5N60RUFDTM
        SGW5N60RUF vs SGW5N60RUFD vs SGW5N60RUFDTM
      • LC717A00AR Touch Sensor
        These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
      • FDMQ86530L Quad-MOSFET
        ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
      Top