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CSD87312Q3E

CSD87312Q3E
Mfr. #:
CSD87312Q3E
विवरण:
MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
CSD87312Q3E डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
CSD87312Q3E थप जानकारी CSD87312Q3E Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
टेक्सास उपकरण
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
VSON-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
27 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
33 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
800 mV
Vgs - गेट-स्रोत भोल्टेज:
8 V
Qg - गेट चार्ज:
6.3 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
2.5 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
NexFET
प्याकेजिङ:
रील
उचाइ:
1 mm
लम्बाइ:
3.3 mm
शृङ्खला:
CSD87312Q3E
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
3.3 mm
ब्रान्ड:
टेक्सास उपकरण
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
39 S
पतन समय:
2.9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
16 ns
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
17 ns
सामान्य टर्न-अन ढिलाइ समय:
7.8 ns
एकाइ वजन:
0.001101 oz
Tags
CSD8731, CSD873, CSD87, CSD8, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30V, N ch NexFET MOSFET™, dual common source SON3x3, 38mOhm 8-VSON-CLIP -55 to 150
***p One Stop Global
Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R
***Components
MOSFET Dual N-Ch 30V 27A NexFET VSON8EP
***ark
30V Powerblock N ch MOSFET
***i-Key
MOSFET 2N-CH 30V 27A 8VSON
***ical
High Frequency Synchronous Power Module
***INS
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
भाग # विवरण स्टक मूल्य
CSD87312Q3E
DISTI # 296-35526-1-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-6-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2270In Stock
  • 1000:$0.5234
  • 500:$0.6630
  • 100:$0.8550
  • 10:$1.0820
  • 1:$1.2200
CSD87312Q3E
DISTI # 296-35526-2-ND		MOSFET 2N-CH 30V 27A 8VSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4506
  • 2500:$0.4743
CSD87312Q3E
DISTI # CSD87312Q3E		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R (Alt: CSD87312Q3E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD87312Q3E
    DISTI # CSD87312Q3E    		Trans MOSFET N-CH 30V 27A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD87312Q3E)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.4469
    • 5000:$0.4249
    • 10000:$0.4109
    • 15000:$0.3969
    • 25000:$0.3859
    CSD87312Q3EDual 30-V N-Channel NexFET Power MOSFETs7050
    • 1000:$0.3500
    • 750:$0.3900
    • 500:$0.4900
    • 250:$0.6000
    • 100:$0.6500
    • 25:$0.7600
    • 10:$0.8200
    • 1:$0.9200
    CSD87312Q3E
    DISTI # 595-CSD87312Q3E    		MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
    RoHS: Compliant    		737
    • 1:$1.0100
    • 10:$0.8600
    • 100:$0.6630
    • 500:$0.5860
    • 1000:$0.4620
    • 2500:$0.4100
    CSD87312Q3EPower Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		7560
    • 1000:$0.4100
    • 500:$0.4300
    • 100:$0.4500
    • 25:$0.4700
    • 1:$0.5000
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    		 Switching Controllers ULQT Dual Sync SD Cntlr
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    		 LDO Voltage Regulators 500mA Lo-Noise LDO Vltg Reg
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    		 Standard LEDs - SMD Red Clear 631nm
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1986
    मात्रा प्रविष्ट गर्नुहोस्:
    CSD87312Q3E को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.०१
    US$ १.०१
    10
    US$ ०.८६
    US$ ८.६०
    100
    US$ ०.६६
    US$ ६६.३०
    500
    US$ ०.५९
    US$ २९३.००
    1000
    US$ ०.४६
    US$ ४६२.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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