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STGW60H65DFB

STGW60H65DFB
Mfr. #:
STGW60H65DFB
निर्माता:
STMicroelectronics
विवरण:
IGBT Transistors 600V 60A trench gate field-stop IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGW60H65DFB डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STGW60H65DFB थप जानकारी STGW60H65DFB Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.6 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
80 A
Pd - शक्ति अपव्यय:
375 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
STGW60H65DFB
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
60 A
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
गेट-एमिटर चुहावट वर्तमान:
250 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
600
उपश्रेणी:
IGBTs
एकाइ वजन:
1.340411 oz
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 60A High-Speed TO247
***ronik
IGBT 650V 80A 1,75V TO247-3
***i-Key
IGBT 650V 80A 375W TO-247
***ark
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
भाग # Mfg। विवरण स्टक मूल्य
STGW60H65DFB
DISTI # 497-14367-ND		STMicroelectronicsIGBT 650V 80A 375W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.7783
  • 510:$3.2943
  • 120:$3.8697
  • 30:$4.4650
  • 1:$5.2600
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.0400
  • 10:€2.8000
  • 100:€2.6800
  • 250:€2.5700
  • 500:€2.4600
  • 1000:€2.0600
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.7900
  • 1200:$2.6900
  • 2400:$2.4900
  • 3600:$2.3900
  • 6000:$2.3900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 600:$5.1900
  • 1200:$4.9900
  • 2400:$4.6900
  • 3600:$4.4900
  • 6000:$4.3900
STGW60H65DFB
DISTI # 511-STGW60H65DFB		STMicroelectronicsIGBT Transistors 600V 60A trench gate field-stop IGBT
RoHS: Compliant		0
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6800
  • 250:$3.4900
  • 500:$3.1300
  • 1000:$2.6400
  • 2500:$2.5100
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB
DISTI # 2629740		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247-3
RoHS: Compliant		0
  • 500:£2.0500
  • 250:£2.2000
  • 100:£2.3800
  • 10:£2.6500
  • 1:£3.2000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 100:£3.5600
  • 50:£3.5700
  • 10:£3.5800
  • 5:£3.6300
  • 1:£3.7000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 250:$8.0900
  • 100:$8.6800
  • 50:$9.7400
  • 10:$10.8500
  • 5:$12.2400
  • 1:$14.0400
STGW60H65DFB-4
DISTI # XSFP00000113820		STMicroelectronicsPower Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB
RoHS: Compliant		80 in Stock0 on Order
  • 80:$11.0000
  • 17:$12.1000
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उपलब्धता
स्टक:
380
अर्डर मा:
2363
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STGW60H65DFB को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.००
US$ ५.००
10
US$ ४.२५
US$ ४२.५०
100
US$ ३.६८
US$ ३६८.००
250
US$ ३.४९
US$ ८७२.५०
500
US$ ३.१३
US$ १ ५६५.००
1000
US$ २.६४
US$ २ ६४०.००
2500
US$ २.५१
US$ ६ २७५.००
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