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SI7802DN-T1-GE3

SI7802DN-T1-GE3
Mfr. #:
SI7802DN-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 250V 1.95A 3.8W 435mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7802DN-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7802DN-T1-GE3 DatasheetSI7802DN-T1-GE3 Datasheet (P4-P6)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-1212-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
3.3 mm
शृङ्खला:
SI7
चौडाइ:
3.3 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI7802DN-GE3
एकाइ वजन:
0.005362 oz
Tags
SI7802DN-T, SI7802D, SI7802, SI780, SI78, SI7
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 250V 1.24A 8-Pin PowerPAK 1212 T/R
***
N-CHANNEL 250-V (D-S) MOSFET
***nell
MOSFET, N CH, 250V, 1.24A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:1.24A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
भाग # Mfg। विवरण स्टक मूल्य
SI7802DN-T1-GE3
DISTI # SI7802DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI7802DN-T1-GE3
    DISTI # SI7802DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI7802DN-T1-GE3
      DISTI # SI7802DN-T1-GE3DKR-ND      		Vishay SiliconixMOSFET N-CH 250V 1.24A 1212-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI7802DN-T1-GE3
        DISTI # 69W7234        		Vishay IntertechnologiesMOSFET, N CHANNEL, 250V, 1.24A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:1.24A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.36ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4VRoHS Compliant: Yes0
          SI7802DN-T1-GE3
          DISTI # 781-SI7802DN-T1-GE3          		Vishay IntertechnologiesMOSFET 250V 1.95A 3.8W 435mohm @ 10V
          RoHS: Compliant          		0
            छवि भाग # विवरण
            SI7802DN-T1-GE3

            Mfr.#: SI7802DN-T1-GE3

            OMO.#: OMO-SI7802DN-T1-GE3

            		 MOSFET 250V 1.95A 3.8W 435mohm @ 10V
            SI7802DN-T1-GE3

            Mfr.#: SI7802DN-T1-GE3

            OMO.#: OMO-SI7802DN-T1-GE3-VISHAY

            		 IGBT Transistors MOSFET 250V 1.95A 3.8W 435mohm @ 10V
            SI7802DN

            Mfr.#: SI7802DN

            OMO.#: OMO-SI7802DN-1190

            		 नयाँ र मौलिक
            SI7802DN-T1-E3

            Mfr.#: SI7802DN-T1-E3

            OMO.#: OMO-SI7802DN-T1-E3-VISHAY

            		 MOSFET N-CH 250V 1.24A 1212-8
            SI7802DN-T1-GE3CT

            Mfr.#: SI7802DN-T1-GE3CT

            OMO.#: OMO-SI7802DN-T1-GE3CT-1190

            		 नयाँ र मौलिक
            उपलब्धता
            स्टक:
            Available
            अर्डर मा:
            3500
            मात्रा प्रविष्ट गर्नुहोस्:
            SI7802DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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