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IXTP160N10T

IXTP160N10T
Mfr. #:
IXTP160N10T
निर्माता:
IXYS
विवरण:
MOSFET 160 Amps 100V 6.9 Rds
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXTP160N10T डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP160N10T DatasheetIXTP160N10T Datasheet (P4-P5)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
IXYS
उत्पादन कोटि
ट्रान्जिस्टर - FETs, MOSFETs - एकल
शृङ्खला
IXTP160N10
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.081130 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-220-3
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
430 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
42 ns
उदय-समय
61 ns
आईडी-निरन्तर-नाली-वर्तमान
160 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
7 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
49 ns
सामान्य-टर्न-अन-डिले-समय
33 ns
च्यानल-मोड
वृद्धि
Tags
IXTP160, IXTP16, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2;2; DeepGATE͐2;2; Power MOSFET
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120 A 100 V 0.0051 ohm N-CHANNEL Si POWER MOSFET TO-220AB
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***icroelectronics
N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET
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***(Formerly Allied Electronics)
MOSFET N-Ch 75V 120A UltraFET III TO220
***nell
MOSFET, N CH, 75V, 120A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
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FDP047N10 Series 100 V 164 A 4.7 mOhm N-Channel PowerTrench Mosfet - TO-220-3
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Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET,N CH,100V,120A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
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N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB
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***ment14 APAC
MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ark
100V 4.5MOHM TO220 3L JEDEC GREEN EMC - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102)
***emi
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ
***ical
Trans MOSFET N-CH Si 100V 164A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
भाग # Mfg। विवरण स्टक मूल्य
IXTP160N10T
DISTI # 31006701		IXYS CorporationTrans MOSFET N-CH 100V 160A 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 1000:$1.8856
  • 500:$2.2358
  • 100:$2.7612
  • 10:$3.3677
IXTP160N10T
DISTI # IXTP160N10T-ND		IXYS CorporationMOSFET N-CH 100V 160A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$1.8788
  • 500:$2.2277
  • 100:$2.7511
  • 50:$3.0196
  • 1:$3.7600
IXTP160N10T
DISTI # C1S331700027304		IXYS CorporationTrans MOSFET N-CH 100V 160A Automotive 3-Pin(3+Tab) TO-220
RoHS: Compliant		50
  • 50:$3.0200
  • 10:$3.6800
  • 1:$5.6700
IXTP160N10T
DISTI # 747-IXTP160N10T		IXYS CorporationMOSFET 160 Amps 100V 6.9 Rds
RoHS: Compliant		0
    छवि भाग # विवरण
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    		 नयाँ र मौलिक
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1000
    मात्रा प्रविष्ट गर्नुहोस्:
    IXTP160N10T को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.९५
    US$ २.९५
    10
    US$ २.८०
    US$ २७.९९
    100
    US$ २.६५
    US$ २६५.१७
    500
    US$ २.५०
    US$ १ २५२.२०
    1000
    US$ २.३६
    US$ २ ३५७.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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