SI9926CDY-T1-E3

Mfr. #:: SI9926CDY-T1-E3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET 20V Vds 12V Vgs SO-8
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SI9926CDY-T1-E3 डाटा पाना
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HTML Datasheet:: SI9926CDY-T1-E3 Datasheet SI9926CDY-T1-E3 Datasheet (P4-P6)SI9926CDY-T1-E3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:: SI9926CDY-T1-E3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: E

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: SO-8

च्यानलहरूको संख्या:: 2 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 20 V

आईडी - निरन्तर ड्रेन वर्तमान:: 8 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 18 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 600 mV

Vgs - गेट-स्रोत भोल्टेज:: 4.5 V

Qg - गेट चार्ज:: 22 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 3.1 W

कन्फिगरेसन:: दोहोरो

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

उचाइ:: 1.75 mm

लम्बाइ:: 4.9 mm

शृङ्खला:: SI9

ट्रान्जिस्टर प्रकार:: 2 N-Channel

चौडाइ:: 3.9 mm

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 45 S

पतन समय:: 12 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 10 ns

कारखाना प्याक मात्रा:: 2500

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 35 ns

सामान्य टर्न-अन ढिलाइ समय:: 15 ns

भाग # उपनाम:: SI9926CDY-E3

एकाइ वजन:: 0.006596 oz

Tags: SI9926CDY-T1, SI9926CDY-T, SI9926CD, SI9926C, SI9926, SI992, SI99, SI9

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9926CDY-T1-E3 विवरण

***(Formerly Allied Electronics): SI9926CDY-T1-E3 Dual N-channel MOSFET Module; 8 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 20 V 0.018 Ohms Surface Mount Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Junction Temperature Tj Max:150°C; Package / Case:SO-8; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Single P-Channel 20 V 0.04 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -20V, -6.7A, 40 mOhm, 33.3 nC Qg, SO-8

***ineon SCT: -20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***roFlash: Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***nell: MOSFET, P, LOGIC, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Dual N/P-Channel 20 V 28/45 mOhm 11.6/15.4 nC 2.14 W Silicon Mosfet - SOIC-8

***(Formerly Allied Electronics): 20V Compl. Pair Enhancement MOSFET SOIC8

***et: Trans MOSFET N/P-CH 20V 8.5A/6.8A 8-Pin SO T/R

***ark: Mosfet, Dual, N/p-Ch, 20V, 7.8A Rohs Compliant: Yes

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, 1.8 W

***ure Electronics: Single N-Channel 20 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R

***ark: N-CH MOSFET SO-8 20V 25MOHM AT 10V - LEAD FREE VERSION

***S: French Electronic Distributor since 1988

***ser: N-Channel MOSFETs 20V 8.5A 2.5W

***ler Electronic: Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R

***ark: DUAL MOSFET, N-CH, 20V, 7.63A, SOIC ROHS COMPLIANT: YES

***(Formerly Allied Electronics): Dual N-Channel Enhancement MOSFET SOIC8

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

SI9926CDY-T1-E3 थप जानकारी

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SI9926CDY-T1-E3 DISTI # V72:2272_09216523	Vishay Intertechnologies	Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R RoHS: Compliant	386	250:$0.5356 100:$0.5951 25:$0.7499 10:$0.7523 1:$0.8760
SI9926CDY-T1-E3 DISTI # SI9926CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	42In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI9926CDY-T1-E3 DISTI # SI9926CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	42In Stock	1000:$0.6458 500:$0.8180 100:$1.0548 10:$1.3350 1:$1.5100
SI9926CDY-T1-E3 DISTI # SI9926CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5852
SI9926CDY-T1-E3 DISTI # 27555268	Vishay Intertechnologies	Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R RoHS: Compliant	386	250:$0.5345 100:$0.5939 25:$0.7475 15:$0.7499
SI9926CDY-T1-E3 DISTI # SI9926CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9926CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3389 5000:$0.3289 10000:$0.3159 15000:$0.3069 25000:$0.2989
SI9926CDY-T1-E3 DISTI # 40P0824	Vishay Intertechnologies	MOSFET, DUAL, NN, SO-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V,No. of Pins:8Pins , RoHS Compliant: Yes	1214	1:$1.2000 10:$0.9980 25:$0.9270 50:$0.8570 100:$0.7860 250:$0.7380 500:$0.6890
SI9926CDY-T1-E3. DISTI # 28AC2187	Vishay Intertechnologies	DUAL N-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5120 2500:$0.5120
SI9926CDY-T1-E3 DISTI # 70026301	Vishay Siliconix	SI9926CDY-T1-E3 Dual N-channel MOSFET Module,8 A,20 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.6000 5000:$0.5700 12500:$0.5500 25000:$0.5300 62500:$0.5200
SI9926CDY-T1-E3 DISTI # 781-SI9926CDY-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs SO-8 RoHS: Compliant	4091	1:$1.0800 10:$0.8840 100:$0.6780 500:$0.5830 1000:$0.5520 2500:$0.5120
SI9926CDY-T1-E3	Vishay Siliconix	8000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	72	29:$0.4800 6:$0.7200 1:$0.9600
SI9926CDY-T1-E3	Vishay Intertechnologies		2026
SI9926CDY-T1-E3 DISTI # C1S803600929593	Vishay Intertechnologies	Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R RoHS: Compliant	386	250:$0.5356 100:$0.5951 10:$0.7523
SI9926CDY-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs SO-8 RoHS: Compliant	Americas -
SI9926CDY-T1-E3 DISTI # 1684059	Vishay Intertechnologies	MOSFET, DUAL, NN, SO-8 RoHS: Compliant	15915	5:£0.7610 25:£0.6810 100:£0.5230 250:£0.4870 500:£0.4500
SI9926CDY-T1-E3 DISTI # 1684059RL	Vishay Intertechnologies	MOSFET, DUAL, NN, SO-8 RoHS: Compliant	0	1:$1.7200 10:$1.4000 100:$1.0800 500:$0.9230 1000:$0.8740 2500:$0.8110
SI9926CDY-T1-E3 DISTI # 1684059	Vishay Intertechnologies	MOSFET, DUAL, NN, SO-8 RoHS: Compliant	1214	1:$1.7200 10:$1.4000 100:$1.0800 500:$0.9230 1000:$0.8740 2500:$0.8110

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SIP32429DN-T1-GE4 OMO.#: OMO-SIP32429DN-T1-GE4	Power Switch ICs - Power Distribution 56mOhm 28volt Smart Load Switch
	Mfr.#: TPS613222ADBVR OMO.#: OMO-TPS613222ADBVR	Switching Voltage Regulators FG OF TPS613222ADBV
	Mfr.#: TLV75533PDBVR OMO.#: OMO-TLV75533PDBVR	LDO Voltage Regulators 500MA LDO
	Mfr.#: 150120BS75000 OMO.#: OMO-150120BS75000	Standard LEDs - SMD WL-SMCW SMDMono TpVw Waterclr 1206 Blue
	Mfr.#: PEC11L-4220F-S0015 OMO.#: OMO-PEC11L-4220F-S0015-BOURNS	Encoders FLATTED SHAFT PUSH SWTCH 30DETENTS
	Mfr.#: TLV75533PDBVR OMO.#: OMO-TLV75533PDBVR-TEXAS-INSTRUMENTS	IC REG LINEAR 3.3V 500MA SOT23-5
	Mfr.#: TMP1075DR OMO.#: OMO-TMP1075DR-TEXAS-INSTRUMENTS	DIGITAL TEMP SENSOR W/ 2-WIRE IN
	Mfr.#: TPS613222ADBVR OMO.#: OMO-TPS613222ADBVR-TEXAS-INSTRUMENTS	IC REG BOOST 5V 2.5A SOT23-5
	Mfr.#: TMP1075DSGR OMO.#: OMO-TMP1075DSGR-1190	High-accuracy upgrade to industry standard LM75 / TMP75 I2C temperature senso
	Mfr.#: SIP32429DN-T1-GE4 OMO.#: OMO-SIP32429DN-T1-GE4-VISHAY	Power Switch ICs - Power Distribution 56mOhm 28volt Smart Load Switch

उपलब्धता

स्टक:: Available
अर्डर मा:: 1988
मात्रा प्रविष्ट गर्नुहोस्:

SI9926CDY-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.०७~~; ~~US$ १.०७~~

10: ~~US$ ०.८८~~; ~~US$ ८.८३~~

100: ~~US$ ०.६८~~; ~~US$ ६७.७०~~

500: ~~US$ ०.५८~~; ~~US$ २९१.००~~

1000: ~~US$ ०.४६~~; ~~US$ ४६०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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SI9926CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes