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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3
Mfr. #:
SIDR610DP-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR610DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR610DP-T1-GE3 DatasheetSIDR610DP-T1-GE3 Datasheet (P4-P6)SIDR610DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIDR610DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8DC-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
39.6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
31.9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
38 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SID
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
27 S
पतन समय:
24 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns
सामान्य टर्न-अन ढिलाइ समय:
9 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
भाग # Mfg। विवरण स्टक मूल्य
SIDR610DP-T1-GE3
DISTI # V99:2348_22587802		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$1.7199
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.4900
    • 18000:$1.5900
    • 30000:$1.5900
    • 6000:$1.6900
    • 12000:$1.6900
    SIDR610DP-T1-GE3
    DISTI # 99AC0534    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$2.0600
    • 250:$2.3000
    • 100:$2.3700
    • 50:$2.5500
    • 25:$2.7200
    • 10:$2.8900
    • 1:$3.4800
    SIDR610DP-T1-GE3
    DISTI # 81AC3429    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
    • 20000:$1.5200
    • 12000:$1.5400
    • 8000:$1.6000
    • 4000:$1.7200
    • 2000:$1.8500
    • 1:$1.9300
    SIDR610DP-T1-GE3
    DISTI # 78-SIDR610DP-T1-GE3    		Vishay IntertechnologiesMOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		5934
    • 1:$3.4500
    • 10:$2.8600
    • 100:$2.3500
    • 250:$2.2800
    • 500:$2.0400
    • 1000:$1.7200
    • 3000:$1.6400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W0
    • 500:£1.4900
    • 250:£1.6700
    • 100:£1.7200
    • 10:£2.0900
    • 1:£2.8400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W
    RoHS: Compliant    		0
    • 1000:$2.2800
    • 500:$2.5000
    • 250:$2.7600
    • 100:$2.9800
    • 10:$3.7400
    • 1:$4.8200
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    OMO.#: OMO-TLV3201AIDCKR-TEXAS-INSTRUMENTS

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1988
    मात्रा प्रविष्ट गर्नुहोस्:
    SIDR610DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.४५
    US$ ३.४५
    10
    US$ २.८६
    US$ २८.६०
    100
    US$ २.३५
    US$ २३५.००
    250
    US$ २.२८
    US$ ५७०.००
    500
    US$ २.०४
    US$ १ ०२०.००
    1000
    US$ १.७२
    US$ १ ७२०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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