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SEMIX653GAL176HDS

SEMIX653GAL176HDS
Mfr. #:
SEMIX653GAL176HDS
निर्माता:
SEMIKRON
विवरण:
IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SEMIX653GAL176HDS डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
Tags
SEMIX65, SEMIX6, SEMIX, SEMI, SEM
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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SEMIX; Trench IGBT Module; 1700V; 800A
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IGBT MODULE, SINGLE, 1.7KV, 619A; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.7kV RoHS Compliant: Yes
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Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
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EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
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IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
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Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
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TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
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BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SEMIX653GAL176HDS
DISTI # 77R2149		SEMIKRONIGBT MODULE, SINGLE, 1.7KV, 619A,Transistor Polarity:NPN,DC Collector Current:619A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.7kV,No. of Pins:-,Product Range:- RoHS Compliant: Yes0
  • 25:$141.9400
  • 10:$151.0300
  • 5:$153.3000
  • 1:$155.5700
SEMIX653GAL176HDS
DISTI # 71042448		SEMIKRONSEMIX,Trench IGBT Module,1700V,800A
RoHS: Compliant		0
  • 1:$237.2200
  • 6:$229.5500
  • 12:$218.9600
  • 24:$209.3100
  • 48:$203.3300
छवि भाग # विवरण
SEMIX653GAL176HDS

Mfr.#: SEMIX653GAL176HDS

OMO.#: OMO-SEMIX653GAL176HDS-1190

 IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS

Mfr.#: SEMIX653GB176HDS

OMO.#: OMO-SEMIX653GB176HDS-1190

 IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC

Mfr.#: SEMIX653GD176HDC

OMO.#: OMO-SEMIX653GD176HDC-1190

 IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SEMIX653GAL176HDS को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २१२.९१
US$ २१२.९१
10
US$ २०२.२६
US$ २ ०२२.६४
100
US$ १९१.६२
US$ १९ १६१.९०
500
US$ १८०.९७
US$ ९० ४८६.७५
1000
US$ १७०.३३
US$ १७० ३२८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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